Allicdata Part #: | IRF7904TRPBFTR-ND |
Manufacturer Part#: |
IRF7904TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 7.6A/11A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 7.6A, 11A 1.4W... |
DataSheet: | IRF7904TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.25V @ 25µA |
Base Part Number: | IRF7904PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.4W, 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16.2 mOhm @ 7.6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A, 11A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7904TRPBF is a type of Field Effect Transistor (FET) array manufactured by Infineon Technologies. It is a high voltage, low on-resistance and low-capacitance gates PMOS FET Array, consisting of two N and P-Channel FETs, each of which has two gates. This device is built using an ultra-thin, ultra-small package and is suitable for high-speed switching, high-density integration and low power circuit applications.
Applications of IRF7904TRPBF Field Effect Transistor Array
The IRF7904TRPBF is ideal for a variety of applications, including multiplexers, switching applications and power management systems, where high voltage and efficiency are important. It can also be used in high-speed signal transmission, low power circuit design, power electronics, and low signal noise protection, as well as various other general purpose switch applications. In addition, its small size makes it ideal for automotive, computing, telecommunications and consumer electronics applications, where it can be used to replace bulkier and more expensive components, such as relay contacts.
Working Principle of IRF7904TRPBF Field Effect Transistor Array
The IRF7904TRPBF is a p-channel FET array that uses the principle of field effect transistor operation. A field effect transistor (FET) is a type of transistor that uses electrical fields to control the movement of electrons in a semiconductor material. In this case, the IRF7904TRPBF consists of two N-channel and two P-channel FETs that are used to control the flow of current. This FET array consists of a gate, body (or substrate), and a source and drain. When a positive voltage is applied to the gate, the two channels are turned on, allowing current to flow from the source to the drain. The gate voltage will determine the amount of current that flows through the FET array. The lower the gate voltage, the more current that will flow. Conversely, the higher the voltage applied to the gate, the less current will flow.
The IRF7904TRPBF is an extremely versatile transistor array and its applications are limited only by the user’s imagination. Its small size and low power requirements make it a great option for a wide range of projects. In addition, its high voltage and low capacitance gates make it a great choice for high-speed switching applications. The IRF7904TRPBF is a great option for any project that requires high efficiency, reliability, and long-term stability.
The specific data is subject to PDF, and the above content is for reference
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