IRF7904TRPBF Allicdata Electronics
Allicdata Part #:

IRF7904TRPBFTR-ND

Manufacturer Part#:

IRF7904TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 7.6A, 11A 1.4W...
DataSheet: IRF7904TRPBF datasheetIRF7904TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Base Part Number: IRF7904PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W, 2W
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7904TRPBF is a type of Field Effect Transistor (FET) array manufactured by Infineon Technologies. It is a high voltage, low on-resistance and low-capacitance gates PMOS FET Array, consisting of two N and P-Channel FETs, each of which has two gates. This device is built using an ultra-thin, ultra-small package and is suitable for high-speed switching, high-density integration and low power circuit applications.

Applications of IRF7904TRPBF Field Effect Transistor Array

The IRF7904TRPBF is ideal for a variety of applications, including multiplexers, switching applications and power management systems, where high voltage and efficiency are important. It can also be used in high-speed signal transmission, low power circuit design, power electronics, and low signal noise protection, as well as various other general purpose switch applications. In addition, its small size makes it ideal for automotive, computing, telecommunications and consumer electronics applications, where it can be used to replace bulkier and more expensive components, such as relay contacts.

Working Principle of IRF7904TRPBF Field Effect Transistor Array

The IRF7904TRPBF is a p-channel FET array that uses the principle of field effect transistor operation. A field effect transistor (FET) is a type of transistor that uses electrical fields to control the movement of electrons in a semiconductor material. In this case, the IRF7904TRPBF consists of two N-channel and two P-channel FETs that are used to control the flow of current. This FET array consists of a gate, body (or substrate), and a source and drain. When a positive voltage is applied to the gate, the two channels are turned on, allowing current to flow from the source to the drain. The gate voltage will determine the amount of current that flows through the FET array. The lower the gate voltage, the more current that will flow. Conversely, the higher the voltage applied to the gate, the less current will flow.

The IRF7904TRPBF is an extremely versatile transistor array and its applications are limited only by the user’s imagination. Its small size and low power requirements make it a great option for a wide range of projects. In addition, its high voltage and low capacitance gates make it a great choice for high-speed switching applications. The IRF7904TRPBF is a great option for any project that requires high efficiency, reliability, and long-term stability.

The specific data is subject to PDF, and the above content is for reference

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