IRGP4660D-EPBF Discrete Semiconductor Products

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IRGP4660D-EPBF belongs to the family of Transistors - IGBTs - Single. It is designed for applications where power efficiency is of high importance.

The working principle of the IRGP4660D-EPBF can be best defined as a power transistor type semiconductor device. It works on a principle that combines the characteristics of both a MOSFET (metal oxide semiconductor field-effect transistor) and a bipolar junction transistor (BJT). The most important integral part of a MOSFET is its gate which helps in increasing the drive current of the transistor and hence, significantly reduces switching losses.

On the other hand, the IRGP4660D-EPBF’s bipolar junction transistor helps to reduce the gate threshold voltage and reduce the on-state voltage drop. This helps to achieve high efficiency and low switching losses. The IRGP4660D-EPBF is highly reliable and has long-term reliability.

The IRGP4660D-EPBF is primarily designed for switched mode power supplies in industrial applications, audio and customer applications, as well as in high-frequency, high-voltage applications. It is designed as a bridge-type layout and is suitable for applications such as motor drives, lighting, and home appliances. It is also compatible with a wide range of PWM controllers.

The IRGP4660D-EPBF forms a symmetrical bridge, which makes it an ideal choice for applications that require bridge-type converters along with full protection against short-circuit and over-voltage. Its drain-source breakdown voltage is rated at 600V and its drain-emitter voltage rating is 400V.

The IRGP4660D-EPBF also features a zero current turn-off from the output, which helps in reducing switching losses, as well as a low gate threshold voltage. This is due to the integrated reverse-conducting diode and reverse recovery characteristics. Along with this, the IRGP4660D-EPBF also offers a temperature protection mechanism, which helps prevent over-temperature. Furthermore, it features a current limit which can be used for current-mode control, as well as fast pick-up and blank gate control.

In summary, the IRGP4660D-EPBF is an ideal choice for power-efficient applications, due to its combination of MOSFET and BJT characteristics. It offers an excellent feature set, including features like zero current turn-off from the output, temperature protection, current limit and reverse-conducting diode, which help reduce switching losses and prevent over-temperature. It is suitable for applications such as motor drives, lighting, and home appliances.

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