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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPS040N03LGBKMA 1-ND	IPS040N03LGBKMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
TT92N08KOFKHPSA 1-ND	TT92N08KOFKHPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Common Cathode - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 104A Current - On State (It (RMS)) (Max): 160A Voltage - Gate Trigger (Vgt) (Max): 1.4V Current - Gate Trigger (Igt) (Max): 120mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 130C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	15+: $57.9243
IRHFA15TB60PBF- ND	HFA15TB60PBF	Infineon Technologies	View more Series: HEXFRED Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10A @ 600V Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55C ~ 150C	493 Order	--
IRFR3410TRRPBF- ND	IRFR3410TRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Power Dissipation (Max): 3W (Ta), 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
AUIRFR6215-ND	AUIRFR6215	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPB60R520CPATMA 1TR-ND	IPB60R520CPATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Power Dissipation (Max): 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
T660N24TOFXPSA1 -ND	T660N24TOFXPSA1	Infineon Technologies	View more Part Status: Last Time Buy Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.6kV Current - On State (It (AV)) (Max): 660A Current - On State (It (RMS)) (Max): 1500A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK	1000 Order	1+: $83.2041
IRFC3306EB-ND	IRFC3306EB	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IPC60R041C6UNSA WNX6SA1-ND	IPC60R041C6UNSA WNX6SA1	Infineon Technologies	View more Part Status: Last Time Buy	1000 Order	1+: $0
IPC60R070C6UNSA WNX6SA1-ND	IPC60R070C6UNSA WNX6SA1	Infineon Technologies	View more Part Status: Last Time Buy	1000 Order	1+: $0
T860N32TOFVTXPS A1-ND	T860N32TOFVTXPS A1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 3.6kV Current - On State (It (AV)) (Max): 860A Current - On State (It (RMS)) (Max): 2000A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz Current - Hold (Ih) (Max): 500mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $171.417
TZ810N22KOFB01H PSA1-ND	TZ810N22KOFB01H PSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.2kV Current - On State (It (AV)) (Max): 819A Current - On State (It (RMS)) (Max): 1500A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz Current - Hold (Ih) (Max): 500mA Operating Temperature: 125C (TJ) Mounting Type: Chassis Mount Package / Case: Module	1000 Order	1+: $241.681
T2180N16TOFVTXP SA1-ND	T2180N16TOFVTXP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 2180A Current - On State (It (RMS)) (Max): 4460A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AD	1000 Order	1+: $256.473
T731N44TOHXPSA1 -ND	T731N44TOHXPSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 4.4kV Current - On State (It (AV)) (Max): 1280A Current - On State (It (RMS)) (Max): 2010A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 350mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz Current - Hold (Ih) (Max): 350mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $610.382
IDD06SG60CXTMA2 -ND	IDD06SG60CXTMA2	Infineon Technologies	View more Series: CoolSiC Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 2.3V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50A @ 600V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55C ~ 175C	1000 Order	2500+: $1.2166
BAS16-02VE6327- ND	BAS 16-02V E632 7	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1A @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150C (Max) Base Part Number: BAS16-02V	1000 Order	1+: $0
IDH04S60CAKSA1- ND	IDH04S60CAKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50A @ 600V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	500+: $1.1907
SIDC42D170E6X1S A2-ND	SIDC42D170E6X1S A2	Infineon Technologies	View more Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 27A @ 1700V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $0
SIDC81D120F6X1S A1-ND	SIDC81D120F6X1S A1	Infineon Technologies	View more Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 27A @ 1200V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55C ~ 150C	1000 Order	1+: $0
BAS16WE6327HTSA 1TR-ND	BAS16WE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1A @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150C (Max) Base Part Number: BAS16W	1000 Order	1+: $0
IDB23E60ATMA1TR -ND	IDB23E60ATMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 41A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 23A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 50A @ 600V Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0
IDH03G65C5XKSA1 -ND	IDH03G65C5XKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50A @ 600V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $1.197 10+: $1.0748 100+: $0.864 500+: $0.7099 1000+: $0.5882
D721S35TXPSA1-N D	D721S35TXPSA1	Infineon Technologies	View more Part Status: Obsolete	1000 Order	1+: $0
D3041N58TXPSA1- ND	D3041N58TXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5800V Current - Average Rectified (Io): 4090A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4000A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100mA @ 5800V Mounting Type: Chassis Mount Package / Case: DO-200AE Operating Temperature - Junction: -40C ~ 160C	1000 Order	1+: $0
DD710N16KHPSA2- ND	DD710N16KHPSA2	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 710A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 2500A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 40mA @ 1600V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $150.627
BAV99SH6827-ND	BAV 99S H6827	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Configuration: 2 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BAV99S	1000 Order	1+: $0
V7226120MSHPSA1 -ND	V7226120MSHPSA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1+: $52.0128
BSL316CH6327XTS A1TR-ND	BSL316CH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.4A, 1.5A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 3.7A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	--
IPD110N12N3GATM A1TR-ND	IPD110N12N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 3V @ 83A (Typ) Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	22500 Order	2500+: $0.6175
IRFS4127TRLPBFT R-ND	IRFS4127TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	6400 Order	--
IPD90N04S3H4ATM A1TR-ND	IPD90N04S3H4ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 65A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4873
IPB70N12S311ATM A1-ND	IPB70N12S311ATM A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1000+: $0.736
IPC60R280E6X1SA 1-ND	IPC60R280E6X1SA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	11124+: $0.8785
IPP65R660CFDAAK SA1-ND	IPP65R660CFDAAK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 660 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IPB65R310CFDAAT MA1-ND	IPB65R310CFDAAT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 440A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V Power Dissipation (Max): 104.2W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.987
IPB042N10N3GE81 87ATMA1TR-ND	IPB042N10N3GE81 87ATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.9962
IPI037N08N3GXKS A1-ND	IPI037N08N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 155A Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	500+: $1.4118
AUIRF7738L2TR-N D	AUIRF7738L2TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 35A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 109A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7471pF @ 25V Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L6 Package / Case: DirectFET Isometric L6	1000 Order	--
IPL60R125C7AUMA 1-ND	IPL60R125C7AUMA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 390A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V Power Dissipation (Max): 103W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	1000 Order	3000+: $1.5634
IPW60R280E6FKSA 1-ND	IPW60R280E6FKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 430A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	240+: $1.6758

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