
Allicdata Part #: | IPC60R070C6UNSAWNX6SA1-ND |
Manufacturer Part#: |
IPC60R070C6UNSAWNX6SA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH BARE DIE |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
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IPC60R070C6UNSAWNX6SA1 is a type of field effect transistor (FET) that is widely used for controlling electrical current in sensing and storage applications. It can switch large currents very rapidly with minimal power consumption, making it ideal for high power switching and power delivery applications. The IPC60R070C6UNSAWNX6SA1 is a single n/p-channel enhancement mode depletion-stacked MOSFET that works on the principles of thermionic emission, field effect and electrostatic force.
The IPC60R070C6UNSAWNX6SA1 is a gallium arsenide depleted-stacked transistor with a dielectric insulation layer between its active gates. This type of transistor is often used for high power switching and power delivery applications, since it can rapidly switch large currents without consuming much power. In addition, due to its small size, the IPC60R070C6UNSAWNX6SA1 is often used in applications where size is a major concern.
The IPC60R070C6UNSAWNX6SA1 works on the principle of thermionic emission, which is the process of electrons being emitted from a hot surface. The transistor starts in an off state, and as the gate voltage is increased, the junction potential between the source and drain increases and the electron transport rate increases, leading to an increase in current. This type of transistor also works on the principles of field effect, where a gate voltage is applied to the gate terminal in order to control the current flow between the source and drain. The electrostatic force created by the gate voltage attracts the electrons from the source and repels them from the drain, thus controlling the current flow between the terminals.
The IPC60R070C6UNSAWNX6SA1 is a ideal for both high power switching and power delivery applications since it can quickly switch large currents without consuming excessive amounts of power. This type of transistor is also often used in applications where size is a major concern due to its small size. Additionally, due to its ability to control currents and provide high power switching and delivery, the IPC60R070C6UNSAWNX6SA1 is especially useful in sensing and storage applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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IPC60R280E6X7SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH |
IPC60R380E6X1SA1 | Infineon Tec... | 0.8 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R199CPX1SA1 | Infineon Tec... | 1.61 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R2K0C6X1SA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60N04S4L06ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 8TDSONN-Chann... |
IPC60R099C6X1SA1 | Infineon Tec... | 2.67 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R520E6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R125C6X1SA1 | Infineon Tec... | 2.37 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R190E6X1SA1 | Infineon Tec... | 1.39 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R190E6X7SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH |
IPC60R950C6X1SA1 | Infineon Tec... | 0.34 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R165CPX1SA4 | Infineon Tec... | 1.89 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R070C6X1SA1 | Infineon Tec... | 3.92 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60N04S406ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 8TDSONN-Chann... |
IPC60R125CPX1SA4 | Infineon Tec... | 2.57 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R385CPX1SA1 | Infineon Tec... | 0.83 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R190P6X7SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH |
IPC60R299CPX1SA2 | Infineon Tec... | 1.1 $ | 1000 | MOSFET N-CH BARE DIE |
IPC65R041CFDX1SA1 | Infineon Tec... | 14.84 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R190E6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R041C6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R070C6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R280E6X1SA1 | Infineon Tec... | 0.97 $ | 1000 | MOSFET N-CH BARE DIE |
IPC65R070C6X1SA1 | Infineon Tec... | 3.98 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R600E6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R099CPX1SA2 | Infineon Tec... | 2.65 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R950C6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R520E6X1SA1 | Infineon Tec... | 0.55 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R160C6X1SA1 | Infineon Tec... | 1.66 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R075CPX1SA1 | Infineon Tec... | 7.01 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R380C6X7SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH |
IPC65R080CFDX1SA1 | Infineon Tec... | 9.38 $ | 1000 | MOSFET N-CH BARE DIE |
IPC65R037C6X1SA2 | Infineon Tec... | 7.31 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R3K3C6X1SA1 | Infineon Tec... | 0.15 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R380E6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R380E6X7SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH |
IPC60R099C6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R125C6UNSAWNX6SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R600E6X1SA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET N-CH BARE DIE |
IPC60R041C6X1SA1 | Infineon Tec... | 10.43 $ | 1000 | MOSFET N-CH BARE DIE |
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