
Allicdata Part #: | IPB65R310CFDAATMA1-ND |
Manufacturer Part#: |
IPB65R310CFDAATMA1 |
Price: | $ 1.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH TO263-3 |
More Detail: | N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Moun... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 0.98697 |
Vgs(th) (Max) @ Id: | 4.5V @ 440µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | Automotive, AEC-Q101, CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 310 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPB65R310CFDAATMA1 is a single N-channel TrenchFET power MOSFET that can be used as a robust and energy-efficient power switch or amplifier. This MOSFET is readily available from many suppliers, with a package size of 12.5 x 11.7mm and an operating temperature range of -40 to +175°C.
The IPB65R310CFDAATMA1 is a relatively large MOSFET and is used for higher-currents applications, such as motor control and LED lighting. With an RDS(on) of only 0.25mΩ, it allows for efficient heat dissipation, making it well-suited for automotive applications, where the cost of power dissipation is an important factor. It also features a fast signal frequency response and a low gate threshold voltage, making it ideal for AC-to-DC conversion.
The working principle of the IPB65R310CFDAATMA1 is based on the same principle as other MOSFETs. The MOSFET consists of two regions: an N-type channel and an insulated gate. When a voltage is applied to the gate, a channel is formed between the source and the drain, allowing electrons to flow from the source to the drain. This current flow creates the necessary output power switch or amplifier.
The IPB65R310CFDAATMA1 is widely used in many fields, including automotive, consumer electronics, renewable energy, power electronics, and industrial applications. Its low RDS(on) allows it to be used in applications that require high current and low power dissipation. For example, it can be used in efficient LED lighting, motor control, AC-DC converters, and power supplies. It is also used in automotive applications, such as starter motors and alternators, HVAC systems, and the control of electric windows.
The IPB65R310CFDAATMA1 is an affordable and reliable MOSFET with a wide range of applications. It offers fast switching speeds and low RDS(on)(s) for efficiency, and its package size allows for easy integration into existing designs. With its high-current capability, wide temperature range and robust power switching, the IPB65R310CFDAATMA1 is a great choice for those looking for a reliable and energy-efficient power switch or amplifier.
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