| Allicdata Part #: | IPP65R660CFDAAKSA1-ND |
| Manufacturer Part#: |
IPP65R660CFDAAKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V TO-220-3 |
| More Detail: | N-Channel 650V 6A (Tc) 62.5W (Tc) Through Hole PG-... |
| DataSheet: | IPP65R660CFDAAKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 200µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | Automotive, AEC-Q101, CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 3.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IPP65R660CFDAAKSA1 Application Field and Working Principle
The IPP65R660CFDAAKSA1 is a type of power MOSFET, which is a single, Single asymmetric N-channel Junction FET (JFET). It is a 3-pin power surface-mount device that is typically used in high-performance analog and high-frequency switching applications.
IPP65R660CFDAAKSA1 is part of a large family of high-speed MOSFETs, all of which use the same semiconductor material to produce the power semiconductor devices. What sets this transistor apart from the others is that it has a high-frequency switching capability, allowing it to support a wide range of applications with very high frequency switching operation.
Among its specialized features, the IPP65R660CFDAAKSA1 offers high input impedance and low inductance. This make it suitable for a wide range of switching applications, including switching high-speed digital signals in video systems. It also has a very low channel-on voltage and channel-off voltage, making it ideal for a variety of analog switching applications as well as in power supplies and regulated supply systems.
It\'s also well-suited for use in high-power, high-speed medical applications, as it provides excellent EMI and RFI immunity, as well as low thermal resistance and fast switching capability. In addition, the IPP65R660CFDAAKSA1 has an impressive cost-to-performance ratio, making it one of the more attractive solutions for a variety of applications.
When it comes to the working principle of the IPP65R660CFDAAKSA1, the device works by combining two power MOSFETs together in a single package. This allows the device to switch currents in both directions, and it can be triggered in a variety of ways, including direct switching, switching with a voltage source or voltage dropping. The device creates a low resistance channel between the two MOSFETs, allowing current to flow, which is then controlled with an external gate signal.
When the gate signal is positive, it causes the threshold of the device to drop and the current to flow into the circuit. The current then passes through the on region and out of the device, causing a change in the load on the circuit. When the gate signal is negative, the threshold voltage rises and the devices switches off, thereby stopping the current flow.
The IPP65R660CFDAAKSA1 is a reliable, low-power, high-speed solution for a number of switching applications. In addition to its high-frequency switching, it has a good price/performance ratio, making it suitable for medical, automotive, and industrial applications. As with all devices, it\'s important to read the manufacturer\'s product specifications and safety information prior to use.
The specific data is subject to PDF, and the above content is for reference
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| IPP65R380C6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 10.6A TO... |
| IPP65R280E6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 13.8A TO... |
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| IPP60R099C6XKSA1 | Infineon Tec... | 4.94 $ | 1000 | MOSFET N-CH 600V 37.9A TO... |
| IPP65R074C6XKSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 57.7A TO... |
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| IPP60R170CFD7XKSA1 | Infineon Tec... | 2.42 $ | 1000 | MOSFET N-CH TO220-3N-Chan... |
| IPP60R380C6XKSA1 | Infineon Tec... | 1.57 $ | 206 | MOSFET N-CH 600V 10.6A TO... |
| IPP65R660CFDXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 6A TO220... |
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| IPP60R380P6XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V TO220-3N... |
| IPP65R099C6XKSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 38A TO22... |
| IPP60R190C6XKSA1 | Infineon Tec... | -- | 1300 | MOSFET N-CH 600V 20.2A TO... |
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IPP65R660CFDAAKSA1 Datasheet/PDF