IPI037N08N3GXKSA1

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The IPI037N08N3GXKSA1 MOSFET is a single-Level FET, capable of switching signals in circuit designs. Its applications include power amplifiers, motor controllers, switching regulators, and audio amplifiers. The IPI037N08N3GXKSA1 is an N-channel mosfet, ceramic encapsulated, with an operating temperature range of -55°C to 150°C.

The IPI037N08N3GXKSA1 FET\'s main selling point is its wide application. Many circuit designs can benefit from this semiconductor, since it can handle a relatively high electric current, up to 110A. Additionally, the low gate-threshold voltage and low capacitance ensure that it can handle difficult switching signals in both analog and digital circuits.

The working principle of the IPI037N08N3GXKSA1 FET is relatively simple but effective. A voltage is applied to the gate terminal, which acts like a switch in the circuit. Depending on the voltage level, the device will either be turned on or off. Once the MOSFET is on, the electric current will flow from the drain terminal to the source terminal. The electric current that flows through the device can range from zero to the maximum current rating.

This MOSFET also features short-circuits protection, allowing it to withstand short circuit conditions up to 10 seconds. It also features a stabilised gate threshold voltage, allowing it to respond quickly to changes in signal voltages during the switching signals process. The IPI037N08N3GXKSA1 is also very reliable, featuring low on-resistance, low channel-length modulation, and a high input impedance.

In conclusion, the IPI037N08N3GXKSA1 is a single-Level FET designed for various high-end circuit designs. It is a reliable, high-performance device that can handle 110A of electric current, and is designed with short-circuits protection and a stabilised gate-threshold voltage. As such, the device is perfect for switching operations in analog and digital circuits where high current is needed.

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