IPC60R041C6UNSAWNX6SA1

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The IPC60R041C6UNSAWNX6SA1is a high-speed single N-channel enhancement mode power MOSFET guarded by advanced planar technology which offers the designer low gate charge and fast switching performance with improved avalanche and ESD robustness. It is highly suited to the switching applications such as DC-DC converters and load switching.

The IPC60R041C6UNSAWNX6SA1 MOSFET has a 55V drain-source voltage, 75A drain current, 8.2mΩRDS(on) at 4.5V and 4.0nC gate charge. It has a low on-state resistance RDS(on) and fast switching speed, providing a smaller size solution with less power loss. The monolithically integrated gate-source ESD protection diode allows the MOSFET to withstand electrostatic discharge voltages up to ±2 kV.

The IPC60R041C6UNSAWNX6SA1 has a dual-gate design that isolates its gate-source terminals from its larger body contact, reducing its on-resistances while increasing its switching speed. A Schottky barrier diode is added to suppress any modulated switching spikes and provide fast turn-off. The low-voltage N- Channel MOSFET has a capacitance that is much lower than that of other MOSFETs, increasing the efficiency of switching circuits and increasing the mosfet\'s power density.

The IPC60R041C6UNSAWNX6SA1 MOSFET has many applications since its small size and high power density has made it popular in a variety of electronic equipment such as lighting, telecommunications and medical products, as well as home appliances such as air conditioners and refrigerators. It is often used in switching regulated power supplies and motor control applications such as relay switching, motor control, and pulse width modulation.

The working principle of the IPC60R041C6UNSAWNX6SA1 MOSFET is quite simple. When the voltage applied to the gate-source terminals is higher than the voltage of the drain-source terminal, the barrier between the source and drain is broken down, allowing current to flow between the two. When the voltage applied to the gate-source terminals is less than the voltage of the drain-source terminal, the barrier between the source and drain is restored, stopping the current from flowing.

The IPC60R041C6UNSAWNX6SA1 MOSFET is a high-performance, low-cost single-channel N-channel enhancement-mode power MOSFET that provides high speed switching, low on-state resistance, and advanced avalanche and ESD robustness. Its low gate-charge and a Schottky barrier diode also provide it with an extra edge, making it an ideal choice for a wide range of applications. Its small size and high power density makes it a great choice for the switching applications such as DC-DC converters, load switching and motor control.

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