IPD90N04S3H4ATMA1 Allicdata Electronics
Allicdata Part #:

IPD90N04S3H4ATMA1TR-ND

Manufacturer Part#:

IPD90N04S3H4ATMA1

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 90A TO252-3
More Detail: N-Channel 40V 90A (Tc) 115W (Tc) Surface Mount PG-...
DataSheet: IPD90N04S3H4ATMA1 datasheetIPD90N04S3H4ATMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.48727
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 4V @ 65µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The IPD90N04S3H4ATMA1 is a single N-channel, depletion-mode MOSFET in a TO-220 package designed for use in industrial and commercial applications, such as power supplies, DC/DC converters, PFC stages, and audio amplifiers.

The IPD90N04S3H4ATMA1 is particularly suited for use in applications requiring high current, low gate charge, and low on-resistance. It is capable of providing a continuous drain current of up to 90 A and a drain-source voltage of up to 650 V.

This MOSFET is designed to operate under a variety of temperatures, ranging from -55°C to 175°C. It is also designed to handle relatively high transients, with a maximum peak current of up to 600 A. This makes it ideal for applications that may require high instantaneous performance.

The working principle of the IPD90N04S3H4ATMA1 is based on the MOSFET’s three-terminal design; gate, source, and drain. When a voltage is applied at the gate, a conductive channel is formed between the source and the drain terminals of the MOSFET, allowing current to flow. This channel is controlled by the voltage applied to the gate, enabling the device to be used as a switch.

The IPD90N04S3H4ATMA1 has a high input capacitance, making it suitable for high-frequency switching applications. It also has a low input capacitance, allowing it to be used in low-frequency applications. The device also has a low drain-source on-resistance, helping it to maintain low power dissipation and good thermal performance.

This MOSFET can be used in a variety of applications, such as motor control, power converters, boost converters, and switching regulators. It can also be used in high-power audio amplification, load switching, and uninterruptible power supply systems. In addition, it can be used in inductive loads, such as in automotive applications.

The IPD90N04S3H4ATMA1 is also designed for use in applications requiring low power dissipation, such as motor control, power supplies, and audio amplifiers. The low on-resistance of the device enables it to maintain low heat generation, resulting in increased reliability and longer life.

Overall, the IPD90N04S3H4ATMA1 is an excellent option for a wide range of applications, from automotive to industrial and audio. The device’s high current and low gate charge makes it suitable for use in high-power applications, while it also has a low on-resistance which makes it suitable for low-power applications. Its low power dissipation and wide operating temperature range make it an ideal choice for use in a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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