| Allicdata Part #: | AUIRFR6215-ND |
| Manufacturer Part#: |
AUIRFR6215 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 150V 13A DPAK |
| More Detail: | P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-... |
| DataSheet: | AUIRFR6215 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 295 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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The AUIRFR6215 is a N-channel enhancement mode MOSFET designed specifically for use in low voltage power management applications, capable of providing both low on-state resistance and fast switching capability. The AUIRFR6215 is pin compatible with many of the popular 40-V N-Channel MOSFETs in the market, allowing easy migration from products with a higher pin count to those with a single pin-count. This MOSFET is suitable for use in a wide range of applications, such as motor control, lighting, power rectification and power management.
The main features of the AUIRFR6215 include a low-on resistance, low-closed-gate resistance, fast switching time and a low drive voltage. It also features a wide operating voltage range and a wide drain-source current range, making it suitable for a variety of applications.
The working principle of the AUIRFR6215 is based on the MOSFET structure. The MOSFET structure consists of three layers: the drain, the channel and the gate. When a voltage is applied to the gate, the electrons in the channel will move and form a conducting channel between the drain and the source. This makes it possible for the current to flow through the channel and from the drain to the source.
The AUIRFR6215 can be used for a variety of applications, such as motor control, lighting, power rectification, power management, mobile power and more. It can be used in switching applications to reduce power consumption and reduce switching losses, as well as in power management to provide a reliable and cost-effective solution to manage electric current. The AUIRFR6215 can also be used in power rectification, providing a low-loss alternative to voltage-clamping devices.
The AUIRFR6215 is an excellent choice for applications that require low power consumption, low switching losses, fast switching time and a low drive voltage. It is suitable for use in a variety of applications, including motor control, power management, power rectification and mobile power.
The specific data is subject to PDF, and the above content is for reference
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AUIRFR6215 Datasheet/PDF