TPH3300CNH,L1Q Discrete Semiconductor Products

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Transistors are essential components in any electronic circuit, used to regulate the current flow and allow for control of the circuit in one way or another.The TPH3300CNH,L1Q is a Field Effect Transistor (FET) made by Renesas, a Japanese semiconductor and electronics technology firm. It is a high-performance n-channel MOSFET (metal oxide semiconductor FET) featuring a low on-resistance and excellent switching capability.

Application fields

The TPH3300CNH,L1Q is suitable for a variety of applications such as lighting, DC motor control, power converters, power MOSFET drivers and gate drivers, etc. It can be used in switching circuits and power management systems due to its high breakdown voltage, low gate driving power and on-resistance. It also offers high-speed switching and low-loss characteristics, making it an ideal choice for both internal and external circuits. It is especially useful for automotive applications as it has wide operating temperature ranges and high creepage distance.

Working Principle

A FET works similar to a BJT (bipolar junction transistor) but utilizing a majority carrier instead of a minority carrier. It consists of a channel, a source and a drain with a gate controlling the channel. As the channel is made from a semiconductor, the voltage applied to the gate can affect the current flowing through the channel. If a positive voltage is applied to the gate, the current flows from the source to the drain (“ON state”); if a negative voltage is applied to the gate, the current is restricted (“OFF state”).

The TPH3300CNH,L1Q is an n-channel MOSFET, which means that the channel is “n-doped”. That is, it has an excess of electrons compared to an intrinsic semiconductor. As a consequence, the channel is “opened” by a negative voltage and “closed” by a positive voltage.

The TPH3300CNH,L1Q has a low on-resistance of 0.7 mΩ, making it well suited for switching applications operating at high current levels. It also has a low gate driving power requirement of 1.0V/500Ω, and a wide operating temperature range of - 55°C up to + 175°C. In addition, its high maximum breaking voltage of 34 V enables it to handle applications with high voltages.

Conclusion

The TPH3300CNH,L1Q is an ideal MOSFET for various applications needing high current switching. It is suitable for a variety of applications such as lighting, DC motor control, power converters, power MOSFET drivers and gate drivers due to its wide operating temperature range, low gate driving power and high breakdown voltage. The low on-resistance also makes it ideal for high current applications. We can therefore conclude that the TPH3300CNH,L1Q is an ideal choice for anyone looking for a reliable and efficient MOSFET solution.

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