SSM6J51TUTE85LF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 1mA
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	UF6
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 10V
Vgs (Max):	±8V
Series:	U-MOSIV
Rds On (Max) @ Id, Vgs:	54 mOhm @ 2A, 2.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 2.5V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Cut Tape (CT)

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The Application Field and Working Principle of SSM6J51TUTE85LF

The SSM6J51TUTE85LF belongs to the family of Transistors - FETs, MOSFETs - Single category. The part number of SSM6J51TUTE85LF is a depletion, enhancement, low voltage, N-Channel MOSFET, which is found in a variety of electronic equipment.This type of FET is an energy-efficient component, as it is a good substitute option for bipolar transistors, as it run cooler and consumes less power than a bipolar transistor. This component is widely used in switching, level shifting, and low level amplifying applications due to its low voltage rating and low ON resistance (Drain-Source ON Resistance).The SSM6J51TUTE85LF was designed to have a low ON resistance and have high gate threshold voltage, with the trade-off of having a moderate transconductance (Gmu). It has a maximum gate-source rating of 6 volts and a maximum drain-source rating of 30 volts. The maximum drain current of the SSM6J51TUTE85LF is 0.55A, and the maximum power dissipation is 730mW.The SSM6J51TUTE85LF is typically used in devices such as microprocessors and other low voltage electronics. Its lower power consumption and longer life span makes it an ideal choice for most electronic applications. The SSM6J51TUTE85LF is a field-effect transistor, which works by controlling the flow of electrons between source and drain. It does this by varying the electric field present between source and drain when the gate voltage varies. This is achieved by the gate, which acts as an electrical barrier between source and drain, preventing electrons from passing between them. When a positive voltage is applied to the gate, the electric field is increased, which causes the electrons to be attracted to the source, thereby allowing them to flow from source to drain. This causes the SSM6J51TUTE85LF to act as a switch, allowing electrical current to flow between the source and the drain.The SSM6J51TUTE85LF is also capable of amplifying weak input signals. This is done by increasing the input current or by boosting the output current at a lower output voltage. The FET works by varying the resistance between its source and drain, which results in the amplification of the input signal.The SSM6J51TUTE85LF has many advantages. It is energy efficient, has a long life span, low voltage rating, and low ON resistance. It is an ideal choice for switching, level shifters and low level amplifiers and is found in a variety of electronic equipment. In conclusion, the SSM6J51TUTE85LF is a useful component for many types of electronics thanks its special design and low voltage properties. It is an energy-efficient component which may be used for switching, level shifting, and low level amplifying applications. Its long life span and low power consumption make it an ideal choice for many different types of electronics.

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