TK12A53D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK12A53D(STA4QM)-ND

Manufacturer Part#:

TK12A53D(STA4,Q,M)

Price: $ 1.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 525V 12A TO-220SIS
More Detail: N-Channel 525V 12A (Ta) 45W (Tc) Through Hole TO-2...
DataSheet: TK12A53D(STA4,Q,M) datasheetTK12A53D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 1.51238
Stock 1000Can Ship Immediately
$ 1.68
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 525V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK12A53D (STA4, Q, M) is a type of field effect transistor (FET) from the single MOSFET family. This four-pin transistor incorporates Exponential current delivery characteristics that work to offer both ultra-fast switching capabilities as well as a wide range of current capability.

The STA4 is an N-channel enhancement mode field effect transistor with a three-layer body structure. It utilizes a combination of a gate, a source and a drain. It works by controlling the current flow between the source and drain by a voltage applied at the gate.

In the TK12A53D MOSFET, the Q and M capabilities are used. Q is the output from the signal source, and the M controls the output of the signal. This provides the user with greater flexibility when using the device. The M can be adjusted to ensure the signal is not over-modulated or over-clocked, and that it does not become distorted or affected by electrical noise.

The working principle of the TK12A53D is quite simple. It operates on the principle of biasing, which means it applies an adjustable voltage to the control gate. This voltage creates an electrical field between the gate and the channel, which affects both the current and the voltage across the channel. By adjusting the gate voltage, the resulting electrical field intensity can be adjusted.

The application of the TK12A53D can best be summed up as a high-speed switching device. It is often used in the consumer audio and visual components, such as amplifiers, as a fast switch, or in power control systems. It is often used in digital circuits as well as in driving small, light-weight motors. In addition, the TK12A53D can be used to regulate the current in power systems and to provide protection against over-current and over-voltage conditions.

The TK12A53D is capable of withstanding a wide range of temperature and humidity conditions and it can even be used in extreme environments. For example, the device is often employed in industrial and automotive applications. In addition, the TK12A53D is capable of withstanding a range of voltages from low to high, making it a suitable choice for use in many different applications.

The TK12A53D is an excellent choice for Ultra-Fast Switching Applications. Its combination of high frequency switching capability, highly stable current delivery, and adjustable gate bias, make it incredibly versatile. With its wide range of current capability and temperature and humidity tolerance, the TK12A53D can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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