Storage interface codec - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TK40E10N1S1X-ND	TK40E10N1,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V Power Dissipation (Max): 126W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	111 Order	1+: $1.3167 50+: $1.0595 100+: $0.9536 500+: $0.7417 1000+: $0.6146
TK28N65WS1F-ND	TK28N65W,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Power Dissipation (Max): 230W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	95 Order	1+: $4.1391 30+: $3.3256 120+: $3.0299 510+: $2.4534 1020+: $2.0692
TK5Q60WS1VQ-ND	TK5Q60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.7V @ 270A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	235 Order	1+: $1.2285 75+: $0.9889 150+: $0.8901 525+: $0.6923 1050+: $0.5736
2SB1457(TE6FM)- ND	2SB1457(TE6,F,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TPC8065-HLQ(S-N D	TPC8065-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.3102
1SV308(TH3F)CT- ND	1SV308(TH3,F)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Obsolete Diode Type: PIN - Single Voltage - Peak Reverse (Max): 30V Current - Max: 50mA Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz Operating Temperature: 125C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Base Part Number: 1SV308	1000 Order	1+: $0
2SK2917(F)-ND	2SK2917(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 10V Power Dissipation (Max): 90W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
TK60D08J1(Q)-ND	TK60D08J1(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 10V Power Dissipation (Max): 140W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220(W) Package / Case: TO-220-3	1000 Order	1+: $0
1SS413CTL3FTR-N D	1SS413CT,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 500nA @ 20V Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: SOD-882 Operating Temperature - Junction: -55C ~ 125C	20000 Order	10000+: $0.0247 30000+: $0.0233 50000+: $0.0218 100000+: $0.0194
CMS10I30A(TE12L QM-ND	CMS10I30A(TE12L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.1302
CMS16(TE12L,Q,M )-ND	CMS16(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 200A @ 40V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C	1000 Order	3000+: $0.1631
TMPM3HQFDFG-ND	TMPM3HQFDFG	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tray Part Status: Active Package / Case: 144-FQFP Supplier Device Package: 144-LQFP (20x20)	580 Order	--
TMPM380FWFG-ND	TMPM380FWFG	Toshiba Semiconductor and Storage	View more Series: * Part Status: Active	1000 Order	--
TC75W59FK(TE85L F)TR-ND	TC75W59FK(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: General Purpose Number of Elements: 2 Output Type: Open Drain Voltage - Supply, Single/Dual (): 1.8 V ~ 7 V, 0.9 V ~ 3.5 V Voltage - Input Offset (Max): 1mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Current - Quiescent (Max): 220A Propagation Delay (Max): 200ns Operating Temperature: -40C ~ 85C Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Supplier Device Package: US8	3000 Order	3000+: $0.1507
TCR3UG28ALFTR-N D	TCR3UG28A,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage Dropout (Max): 0.327V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	5000 Order	5000+: $0.0771 10000+: $0.0722 25000+: $0.0662 50000+: $0.0637
TAR5S50TE85LFTR -ND	TAR5S50TE85LF	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active Number of Regulators: 1 Current - Output: 200mA Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	6000 Order	--
TLP624F-ND	TLP624F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10s, 8s Rise / Fall Time (Typ): 8s, 8s Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	1822 Order	--
TLP2261(D4-TP4E -ND	TLP2261(D4-TP4, E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C	1000 Order	1500+: $0.5622
TLP2770(D4-TPE- ND	TLP2770(D4-TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 1.3ns, 1ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO	1000 Order	1500+: $0.5994
TLP291-4(TPE)TR -ND	TLP291-4(TP,E)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2396 6000+: $0.2342 10000+: $0.2252
TLP385(GR-TPLE- ND	TLP385(GR-TPL,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TB6615PG8-ND	TB6615PG,8	Toshiba Semiconductor and Storage	View more Series: * Part Status: Active	1000 Order	500+: $0.8489
TLP290(SE-ND	TLP290(SE	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	175+: $0.1375
TLP385(D4-GRHE- ND	TLP385(D4-GRH,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	125+: $0.1996
TLP504A-2GBF-ND	TLP504A-2(GB,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	1000 Order	1+: $0
TB62D612FTGELTR -ND	TB62D612FTG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Type: Linear Internal Switch(s): Yes Number of Outputs: 24 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 4V Current - Output / Channel: 40mA Dimming: Analog, IC, PWM Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	1000 Order	4000+: $1.4244
TPCA8007HTE12LQ CT-ND	TPCA8007-H(TE12 L,Q	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 47 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TLP3420(TPFTR-N D	TLP3420(TP,F	Toshiba Semiconductor and Storage	View more Series: TLP3420 Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 100V Load Current: 100mA On-State Resistance (Max): 14 Ohms Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.096", 2.45mm) Supplier Device Package: 4-VSON	3000 Order	3000+: $1.1752
TLP206GFTR-ND	TLP206G(TP,F)	Toshiba Semiconductor and Storage	View more Series: TLP206G Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) x 2 Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 35 Ohms Termination Style: Gull Wing Package / Case: 8-SOP (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (2.54mm)	1000 Order	2500+: $1.6788
TLP127TPRUFTR-N D	TLP127TPRUF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 1000% @ 1mA Turn On / Turn Off Time (Typ): 50s, 15s Rise / Fall Time (Typ): 40s, 15s Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 1.2V Operating Temperature: -55C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-MFSOP, 4 Lead	51000 Order	3000+: $0.2581 6000+: $0.2523 15000+: $0.2426
TLP5754(E-ND	TLP5754(E	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL	185 Order	1+: $1.9404 10+: $1.7205 25+: $1.2766 125+: $1.1102 250+: $0.9992 500+: $0.8881 1000+: $0.7633 2500+: $0.7216 5000+: $0.6939
TLP2955(F)-ND	TLP2955(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 25mA Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Rise / Fall Time (Typ): 16ns, 14ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 3 V ~ 20 V Operating Temperature: -40C ~ 125C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	804 Order	1+: $1.2222 10+: $0.991 50+: $0.7623 100+: $0.6861 250+: $0.6098 500+: $0.5184 1000+: $0.4269 2500+: $0.4055 5000+: $0.3964
TLP291(GRH-TPSE TR-ND	TLP291(GRH-TP,S E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.0649
TLP385(BLLE-ND	TLP385(BLL,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	125+: $0.1996
TPCA8A04-H(TE12 L,Q-ND	TPCA8A04-H(TE12 L,Q	Toshiba Semiconductor and Storage	View more Series: U-MOSV-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
2SC5108-YLFCT-N D	2SC5108-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Gain: 11dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
RN1610(TE85LF)T R-ND	RN1610(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
RN4910(T5LFT)TR -ND	RN4910(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
SSM3J15FVL3FTR- ND	SSM3J15FV,L3F	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	1000 Order	8000+: $0.0246
TPH3R704PLL1QTR -ND	TPH3R704PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 2.4V @ 0.2mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V Power Dissipation (Max): 960mW (Ta), 81W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.2005

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