SSM3J15FV,L3F Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.7V @ 100µA
Package / Case:	SOT-723
Supplier Device Package:	VESM
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	150mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9.1pF @ 3V
Vgs (Max):	±20V
Series:	π-MOSVI
Rds On (Max) @ Id, Vgs:	12 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to SSM3J15FV,L3FThe SSM3J15FV,L3F is an Ultra Low Gate Charge AEC-Q101 Qualified N- Channel MOSFET series. It is designed to provide ultra low RDS(ON), fast body diode, fast recovery diode, and low gate charge. This MOSFET is suitable in automotive, industrial and portable equipment applications where EMI, load variation, and power saving are of paramount importance.Application FieldSSM3J15FV,L3F is suitable for a variety of applications due to its fast switching speeds, very low power dissipation and superior ruggedness. This MOSFET series is used for high frequency DC-DC converters, high-current switching regulator and switching operations in systems with high EMI sensitivity. It is also used in DC motor control, AC motor control, server power supply, and industrial and telecom systems.Working PrincipleA MOSFET is a voltage-controlled device, an insulated gate field effect transistor (IGFET). It is similar to other field effect transistors (FETs) and works using the same principle of a polarized gate is used to control the flow of current between two leads.The SSM3J15FV,L3F uses an N-type MOSFET whose source is connected to the ground and the drain is connected to the supply voltage. When a voltage is applied to the gate of the MOSFET, it has a linear “on” region of operation. This means that if a higher voltage is applied to the gate the drain current increases proportionally. This means that the gate voltage can be controlled in order to control the drain current and the flow of current through the channel, hence controlling the output voltage.When the gate voltage is below the threshold voltage, the MOSFET is in the cut-off region and no current flows from source to drain. When the gate voltage is increased beyond the cut-off voltage, the MOSFET is in the linear region and the current flow increases as the gate voltage increases. The SSM3J15FV,L3F has a fast switching speed and low gate charge, making it suitable for automotive, industrial and portable equipment applications. It also has fast body and recovery diodes, enabling it to operate at high switching frequencies and still remain in the linear region. This makes the SSM3J15FV,L3F a great choice for EMI, load variation and power saving applications.ConclusionThe SSM3J15FV,L3F is an effective device that is widely used in a variety of applications due to its ultra low RDS(ON), fast body and recovery diodes, fast switching speed, and low gate charge. This MOSFET is suitable for applications where EMI, load variation, and power saving are of paramount importance and is particularly well-suited for automotive, industrial and portable equipment applications.

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