TPH3R704PL,L1Q Allicdata Electronics

TPH3R704PL,L1Q Discrete Semiconductor Products

Allicdata Part #:

TPH3R704PLL1QTR-ND

Manufacturer Part#:

TPH3R704PL,L1Q

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 40V 92A TSON
More Detail: N-Channel 40V 92A (Tc) 960mW (Ta), 81W (Tc) Surfac...
DataSheet: TPH3R704PL,L1Q datasheetTPH3R704PL,L1Q Datasheet/PDF
Quantity: 1000
5000 +: $ 0.20050
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 0.2mA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: U-MOSIX-H
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 46A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The term TPH3R704PL,L1Q is commonly identified as a complementary MOSFET (CMOS) transistor, specifically a form of insulated-gate field-effect transistors (IGFETs) that utilizes both n-type and p-type field-effect transistors. This type of transistor is designed for switching, voltage level shifting, and other similar applications within high speed and low power consumption electronics.

MOSFET transistors are commonly found within a wide range of electronic devices, such as computers, audio amplifiers, and even small-scale robotics. While there are several varieties of MOSFETs, the TPH3R704PL,L1Q is considered to be a single-gate FET due to its minimalistic design and specifications.

The TPH3R704PL,L1Q is a monolithic N-Channel MOSFET that is constructed as a discrete device. This type of integrated circuit is generally rated for working voltages up to 30 volts, with drain currents of up to 8 amps. Like other MOSFETs, the TPH3R704PL,L1Q is a voltage-controlled device with a gate voltage required to activate the transistor. This type of MOSFET transistor operates with a high input impedance, meaning that the voltage applied to the gate has negligible power consumption.

The field of application of a TPH3R704PL,L1Q solely depends on the specifics of its design. It can be used as a switch in a wide array of applications, including power control, signal relaying, and current limiting. The TPH3R704PL,L1Q is also able to be applied as a voltage level shifter, meaning it can take the input voltage from a DC source and convert it to the appropriate voltage level that is compatible with its host device.

As with any MOSFET, the working principle of the TPH3R704PL,L1Q is relatively simple. The working principle is based around the three terminals of the device, the drain, the source, and the gate. In the “on” mode, an input voltage is applied to the gate, creating a strong electrical field which attracts the electrons from the source, creating a conductive channel between the two terminals. When the input voltage is removed, the electrons return to the source again, thus turning off the transistor.

In short, the TPH3R704PL,L1Q is a MOSFET transistor that is designed for both switching and voltage level shifting applications. Consisting of three terminals, the TPH3R704PL,L1Q is capable of producing high switching speeds while consuming low power. This type of transistor is ideal for use in a variety of applications that require high speed power control, signal relaying, or current limiting.

The specific data is subject to PDF, and the above content is for reference

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