Allicdata Part #: | 2SK2917(F)-ND |
Manufacturer Part#: |
2SK2917(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 18A TO-3PN |
More Detail: | N-Channel 500V 18A (Ta) 90W (Tc) Through Hole TO-3... |
DataSheet: | 2SK2917(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P(N)IS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3720pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2SK2917(F) is a high-voltage and high-current switching FET (Field Effect Transistor). It is primarily used to control power in a range of applications, such as heavy-load, high-efficiency switching power supplies, motor speed control and solenoids. The transistor has a wide operating temperature range of -55 to 150°C and a low ON-resistance of only 1.8 ohms at -25°C.
The 2SK2917(F) is classified as an n-channel lateral MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is also sometimes referred to as an insulated-gate FET because it uses an insulated gate to control current flow. This type of transistor is capable of switching high power but at a lower voltage. The transistor is made with a hybrid structure consisting of an oxide-isolated silicon substrate, a silicon nitride gate dielectric, and a silicide-side gate structure.
The primary benefit of the 2SK2917(F) is its high current-carrying capacity due to its low on-resistance. This allows it to be used in high power-handling applications such as solenoids, motors and power supply circuits. The device also offers low gate-threshold voltage and low gate-to-source capacitance. This makes it ideal for speed control and high efficiency switching operations.
The 2SK2917(F) is an n-channel device, meaning that it is polarized such that the voltage at the gate terminal must either remain constant or increase for the transistor to remain in the "on" state. This means that in order for the transistor to turn off the voltage at the gate must drop below the threshold voltage. The transistor is usually turned on and off using a charge pump circuit or a voltage divider circuit.
The 2SK2917(F) is capable of withstanding high voltages and currents, making it suitable for high-power applications. Additionally, it is also able to support very high switching speed, making it ideal for pulse-width-modulation applications. Moreover, its low gate-threshold voltage reduces switching loss and allows for more efficient power control.
In conclusion, the 2SK2917(F) is an excellent high-power switch for a variety of applications. It has a wide operating temperature range, low on-resistance, and robust current handling capacity, making it ideal for motor speed control, power supply circuitry, and other high-power switching operations.
The specific data is subject to PDF, and the above content is for reference
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