RN4910(T5L,F,T)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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The RN 4910 (T5L, F, T) is a type of pre-biased array bipolar junction transistor (BJT). It is an integrated circuit (IC) designed for power amplification or switching applications in various systems. It consists of two packaged components; a silicon chip and an external heatsink. The heatsink helps dissipate heat in order to protect the component from overheating. The component is ideal for high-power applications and is commonly used in automotive, medical, industrial and consumer electronics.The RN 4910 (T5L, F, T) is composed of four (4) integrated transistors, consisting of three (3) NPN transistors and one (1) PNP transistor, which offer high performance in terms of current, voltage and power control. The component is suitable for use in a variety of circuits, from driving servo motors to audio amplifier systems. It offers wide ranges of operating temperature and voltage, in order to meet various requirements.The component offers two configurations for its pin assignments; a two-pin configuration and a three-pin configuration. In the two-pin configuration, the two pins are used for the base-emitter junction and the collector-emitter junction, respectively. In the three-pin configuration, the pins are used for the collector-base, base-emitter and the collector-emitter junctions, respectively. The main advantage of the three-pin configuration is that it allows for higher control of the current, voltage and power.The operating principles of the RN4910 (T5L, F, T) are based on the BJT technology. In the configuration of two transistors (one NPN and one PNP), the current flows from the base-emitter junction of the PNP transistor to the collector-emitter junction of the NPN transistor, and vice versa. The voltage across the junctions is controlled by varying the current flow in the base-emitter junctions of the two transistors. This process is known as base-emitter biasing.The RN4910 (T5L,F,T) offers high speed switching and high power amplification, with good thermal stability and high current efficiency. The component provides excellent linearity and low distortion, which makes it ideal for audio amplifier systems. It is suitable for use in various applications, such as automotive, industrial, telecom, and consumer electronics.The RN4910 (T5L,F,T) is a cost-effective solution for power amplification applications in various systems. It is simple to set up and use, and it offers good performance and reliability. It is a good choice for applications that require high speed switching and high power amplification, as well as linearity and low distortion. With its high efficiency and stability, it is one of the most reliable transistors available on the market today.

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