Storage interface codec - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TK22A10N1S4X-ND	TK22A10N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	75 Order	1+: $1.0332 50+: $0.8257 100+: $0.7224 500+: $0.5603 1000+: $0.4423
TPCC8066-HLQ(S- ND	TPCC8066-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power Dissipation (Max): 700mW (Ta), 17W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
1SS370TE85LFTR- ND	1SS370TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1A @ 200V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
TPCA8065-HLQ(S- ND	TPCA8065-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power Dissipation (Max): 1.6W (Ta), 25W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.5702
TK14A55D(STA4QM )-ND	TK14A55D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 370 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.8486
1SV307(TPH3F)TR -ND	1SV307(TPH3,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard - Single Voltage - Peak Reverse (Max): 30V Current - Max: 50mA Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5 Ohm @ 10mA, 100MHz Operating Temperature: 125C (TJ) Package / Case: SC-76, SOD-323 Supplier Device Package: USC	12000 Order	3000+: $0.0619 6000+: $0.0585
TLP331(BV,F)-ND	TLP331(BV,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10s, 8s Rise / Fall Time (Typ): 8s, 8s Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	1000 Order	1+: $0
TLP631(GR,F)-ND	TLP631(GR,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	1000 Order	1+: $0
SSM6N44FELMTR-N D	SSM6N44FE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6N44	1000 Order	4000+: $0.0551
2SA1162-GRLFTR- ND	2SA1162-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: 2SA1162	12000 Order	3000+: $0.0202 6000+: $0.0183 15000+: $0.0159 30000+: $0.0143 75000+: $0.0127 150000+: $0.0106
RN2422TE85LF-ND	RN2422TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0595
RN1602(TE85LF)T R-ND	RN1602(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
TC7MB3125CFT-EL (M)TR-ND	TC7MB3125CFT-EL (M)	Toshiba Semiconductor and Storage	View more Series: TC7MB Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 4 Voltage Supply Source: Single Supply Voltage - Supply: 4 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP Base Part Number: 7MB3125	2000 Order	2000+: $0.1827
TC74HCT7007AF-E LFTR-ND	TC74HCT7007AF-E LF	Toshiba Semiconductor and Storage	View more Series: TC74HCT Packaging: Tape & Reel (TR) Part Status: Not For New Designs Logic Type: Buffer, Non-Inverting Number of Elements: 6 Number of Bits per Element: 1 Output Type: Push-Pull Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Supplier Device Package: 14-SOP	4000 Order	2000+: $0.1182
TC74VHC14FT(EK2 M)TR-ND	TC74VHC14FT(EK2 ,M)	Toshiba Semiconductor and Storage	View more Series: TC74VHC Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.9 V ~ 1.65 V Logic Level - High: 2.2 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width) Base Part Number: 74VHC14	1000 Order	1+: $0
TB67S512FTAGELT R-ND	TB67S512FTAG,EL	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	1000 Order	4000+: $0.774 8000+: $0.7453
TC75W60FK(TE85L F)-ND	TC75W60FK(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Amplifier Type: General Purpose Number of Circuits: 2 Slew Rate: 5.1 V/s Current - Input Bias: 1pA Voltage - Input Offset: 2mV Current - Supply: 660A Current - Output / Channel: 1.25mA Voltage - Supply, Single/Dual (): 1.8 V ~ 7 V, 0.9 V ~ 3.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8 Base Part Number: TC75W60	1000 Order	1+: $0
TLP3073(TP1F-ND	TLP3073(TP1,F	Toshiba Semiconductor and Storage	View more Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 800V Static dV/dt (Min): 2000V/s (Typ) Current - LED Trigger (Ift) (Max): 5mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 1mA (Typ) Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Approvals: CQC, cUR, UR	1000 Order	1500+: $0.4754
TLP385(BLL-TPRE -ND	TLP385(BLL-TPR, E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TLP388(D4GB-TRE -ND	TLP388(D4GB-TR, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 350V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Supplier Device Package: 6-SO	1000 Order	3000+: $0.1678
TCR5AM085LFTR-N D	TCR5AM085,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.85V Voltage Dropout (Max): 0.22V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 55A Current - Supply (Max): 68A PSRR: 70dB ~ 40dB (1kHz ~ 10Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	5000 Order	5000+: $0.0822 10000+: $0.0765 25000+: $0.0726 50000+: $0.0709
TLP240D(TP1FTR- ND	TLP240D(TP1,F	Toshiba Semiconductor and Storage	View more Series: TLP240D Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 200V Load Current: 250mA On-State Resistance (Max): 8 Ohms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	3000 Order	1500+: $0.4773 3000+: $0.4535 7500+: $0.4432 10500+: $0.4262
TLP3543A(TP1FTR -ND	TLP3543A(TP1,F	Toshiba Semiconductor and Storage	View more Series: TLP3543A Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.64VDC Voltage - Load: 0V ~ 30V Load Current: 5A On-State Resistance (Max): 40 mOhms Termination Style: Gull Wing Package / Case: 6-SMD (0.300", 7.62mm) Supplier Device Package: 6-SMD	3000 Order	1500+: $1.3142 3000+: $1.2907
2SA1020ANSEIKIF (J-ND	2SA1020A,NSEIKI F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TJ10S04M3L(T6L1 NQ-ND	TJ10S04M3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Power Dissipation (Max): 27W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
GT10G131(TE12L, Q)-ND	GT10G131(TE12L, Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A Power - Max: 1W Input Type: Standard Td (on/off) @ 25C: 3.1s/2s Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0) Base Part Number: GT10	1000 Order	1+: $0
2SK2035(T5LFT)T R-ND	2SK2035(T5L,F,T )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	1000 Order	1+: $0
CMS09(TE12LQM)- ND	CMS09(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 500A @ 30V Capacitance @ Vr, F: 70pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C	1000 Order	3000+: $0.0971
CUS01(TE85L,Q,M )-ND	CUS01(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1.5mA @ 30V Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
TK20E60WS1VX-ND	TK20E60W,S1VX	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V Power Dissipation (Max): 165W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	50+: $3.147
SSM3K333RLFTR-N D	SSM3K333R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 436pF @ 15V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	12000 Order	3000+: $0.0691
HN3C51F-BL(TE85 LFTR-ND	HN3C51F-BL(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
RN2104ACT(TPL3) TR-ND	RN2104ACT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
RN1501(TE85LF)C T-ND	RN1501(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
TK6R7P06PLRQTR- ND	TK6R7P06PL,RQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 2.5V @ 300A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 30V Power Dissipation (Max): 66W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3388
2SC3669-YT2PASF (M-ND	2SC3669-Y,T2PAS F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
2SD2257(CANOAQ) -ND	2SD2257(CANO,A, Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
TK50E10K3(S1SS- Q)-ND	TK50E10K3(S1SS- Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Mounting Type: Through Hole Supplier Device Package: TO-220-3	1000 Order	1+: $0
TPC8A06-H(TE12L QM)-ND	TPC8A06-H(TE12L QM)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V FET Feature: Schottky Diode (Body) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
1SS295(TE85LF)T R-ND	1SS295(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io) (per Diode): 30mA Voltage - Forward (Vf) (Max) @ If: 320mV @ 2mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 25A @ 500mV Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	1000 Order	1+: $0

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