2SK2035(T5L,F,T) Discrete Semiconductor Products |
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Allicdata Part #: | 2SK2035(T5LFT)TR-ND |
Manufacturer Part#: |
2SK2035(T5L,F,T) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 0.1A SSM |
More Detail: | N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | 2SK2035(T5L,F,T) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 10mA, 2.5V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 8.5pF @ 3V |
FET Feature: | -- |
Power Dissipation (Max): | 100mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SSM |
Package / Case: | SC-75, SOT-416 |
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The 2SK2035 (T5L,F,T) is a type of FET or field effect transistor, part of a family of MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, which use a channel of conducting material between the source and drain of electrons to conduct current, as opposed to traditional transistors which use a juncture between a base and two layers of semiconductors. The 2SK2035 transistor is a single device, meaning that it requires no gate connection; its gate is an integral part of the device, rather than having two separate terminals.
The 2SK2035 transistor is extensively used in many applications, such as battery-powered mobile devices, signal processing, and fibre-optic communications networks. It is commonly used in DC-to-DC conversion circuits and can be found in radio and television amplifiers, audio adjusters, and amplifiers for communications systems. The primary application of the 2SK2035 is in high-speed switching and low-noise amplification, due to its ability to rapidly switch between states with minimal current variation. The 2SK2035 is also an efficient amplifier for low-frequency signals.
The underlying principle behind the 2SK2035 is simple: when a positive voltage is applied to the gate, electrons are drawn from the source to the drain, creating a conductive channel, while a negative voltage switches off the current and reverts the transistor to its original state. As no physical contact is required, the transistor can be switched on and off very quickly and without significant power consumption. This makes the 2SK2035 ideal for applications where small physical size, low power requirements and high switching speed are needed.
The 2SK2035 has several benefits compared to traditional transistors, including higher output and gain bandwidth, lower input capacitance, and overall improved noise performance. Furthermore, since it requires no physical contacts, it is less vulnerable to damage or contamination from sources such as dust and dirt. Additionally, the 2SK2035 is capable of handling lower operating voltages, which enable increased efficiency and improved safety in applications such as telecommunications and computing.
Overall, the 2SK2035 FET transistor is ideal for a range of high-speed switching and low-noise amplification applications. Its small physical size and low power consumption make it highly attractive for use in battery-powered devices, enabling manufacturers to produce products with long shelf lives and high performance. Furthermore, its ability to rapidly switch between states with minimal power consumption makes it ideal for a range of telecommunications, fibre-optic networks and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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