TK20E60W,S1VX Allicdata Electronics
Allicdata Part #:

TK20E60WS1VX-ND

Manufacturer Part#:

TK20E60W,S1VX

Price: $ 3.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 600V 20A TO-220
More Detail: N-Channel 600V 20A (Ta) 165W (Tc) Through Hole TO-...
DataSheet: TK20E60W,S1VX datasheetTK20E60W,S1VX Datasheet/PDF
Quantity: 1000
50 +: $ 3.14698
Stock 1000Can Ship Immediately
$ 3.5
Specifications
Series: DTMOSIV
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V
FET Feature: --
Power Dissipation (Max): 165W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Description

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A transistor is a semiconductor device that is used to control currents and voltages in an electronic system. Transistors are also used as amplifying devices to increase the power of signals. Transistors come in many varieties, but one of the most commonly used types is the Field Effect Transistor (FET). The TK20E60W, S1VX is an example of a FET.

The TK20E60W, S1VX is a single FET and is a part of the family that includes power MOSFETs, high-voltage MOSFETs, and low voltage MOSFETs. It is also known as an insulated gate-bipolar transistor (IGBT). The IGBT is a type of power MOSFET with an insulated gate. It combines features of the MOSFET and the bipolar transistor, making it a versatile device for controlling currents and voltages.

The TK20E60W, S1VX is a unique device because it is able to handle large currents and voltages while providing low on-state resistance. This makes it ideal for use in applications such as power management, solid state lighting, and automotive applications. It can also be used as part of a switching system in both industrial and consumer applications.

The working principle of the TK20E60W, S1VX is based on the concept of voltage dividers. A voltage divider is a circuit that is used to divide the applied voltage into a desired ratio. It is composed of two series-connected resistors, where the ratio of their resistances determines the output voltage. The TK20E60W, S1VX is able to control the current and voltage without any external resistors. It works by controlling the current flowing through the gate-drain junction, which then results in a voltage drop at the source and drain.

The TK20E60W, S1VX offers low on-state resistance and can operate at high frequencies, making it well suited for use in applications such as radio transmitters and transceivers, solar inverters, and motor control systems. It is also used in digital and analog circuit designs. The TK20E60W, S1VX provides excellent noise immunity, making it suitable for use in noise-sensitive applications.

The TK20E60W, S1VX is a single FET that offers excellent performance and versatility for a wide range of applications. Its ability to handle high currents and voltages coupled with its low on-state resistance makes it an ideal choice for power management, motor control, and other applications. Its voltage-dividing function also makes it well suited for use in switching systems. Its superior noise immunity makes it suitable for noise-sensitive applications. Overall, the TK20E60W, S1VX is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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