TPC8A06-H(TE12LQM)

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The TPC8A06-H (TE12LQM) is a high-frequency N-Channel Power MOSFET commonly used in power supply and low-noise amplifier applications. This device is a single-channel silicon large-area MOSFET, which offers excellent breakdown characteristic ratios, high transfer gains, and low transition times thanks to its high operating temperature, low gate charge, and low on-resistance.

The TPC8A06-H MOSFET is suitable for high-frequency, low-noise amplifier, and power supply applications. It is typically used to create a low-noise, high-output voltage from a single supply. This MOSFET excels in switching applications including high-speed power supply, transmission line feedback systems, switching transients, and low-input capacitance designs. In addition, it is ideal for use in high-speed switching applications such as motor control, microwave ovens, and UPS systems.

The TPC8A06-H Power MOSFET is a N-channel device with a lateral structure, meaning it has a lower resistance between its source and drain than a vertical voltage-controlled transistor. It is constructed with a layer of N-type silicon dioxide on a silicon substrate. This layer of silicon dioxide acts as a gate and is connected to the source and drain terminals via a metal gate contact. The N-type semiconductor material provides maximum doping at the surface of the gate channel, resulting in a high-frequency, low-noise, high-power capability.

The TPC8A06-H Power MOSFET works by controlling the flow of electrical current between its two terminals. When the gate voltage is increased, it acts as a switch and allows current to flow from the drain terminal to the source terminal. Conversely, when the gate voltage is decreased, it acts as an insulator and prevents current from flowing from the drain to the source. The effective resistance of the device is determined by the voltage applied across its gate controls. The advantage of using this MOSFET is that it can be easily and precisely controlled without the need for further protective circuitry.

The TPC8A06-H Power MOSFET is a reliable, fast response, and low-noise device which make them suitable for use in power supply and low-noise amplifier applications. This MOSFET is a cost-effective alternative to BJTs, and due to its lower on-resistance and improved performance, it has become increasingly popular in electronics design.

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