SSM6N44FE,LM Allicdata Electronics

SSM6N44FE,LM Discrete Semiconductor Products

Allicdata Part #:

SSM6N44FELMTR-ND

Manufacturer Part#:

SSM6N44FE,LM

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET 2N-CH 30V 0.1A ES6
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Su...
DataSheet: SSM6N44FE,LM datasheetSSM6N44FE,LM Datasheet/PDF
Quantity: 1000
4000 +: $ 0.05506
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Base Part Number: SSM6N44
Supplier Device Package: ES6 (1.6x1.6)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs: --
Series: --
Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM6N44FE,LM is a transistor array with field effect transistors (FETs). It is a type of highly efficient device which has many applications in a variety of electrical and electronic products.A FET is a type of transistor consisting of a variable gate which controls the flow of current between two terminals. FETs work by modulating the current passing through the device which is dependent on an electrical signal supplied to the gate. This varies the resistance to the current flow and allows for precise control of the current.The SSM6N44FE,LM consists of two FETs, which are arranged in a common-gate configuration. This means that the gate voltage is common to both FETs. This results in a reduced power loss compared to other configurations, as the gate and drain voltages must be equal in order for the device to work.The SSM6N44FE,LM can be used in many different applications. For example, it can be used in digital systems as a switch or amplifier, in switching power supplies, in the control of motors, and in the protection of electronic components from voltage and current overloads. It can also be used in radio frequency (RF) circuits, in high frequency applications such as Wi-Fi communication and in power amplifiers.In addition to its versatility, the SSM6N44FE,LM has other advantages over other types of FETs. It has a high input impedance, which allows for greater circuit isolation and improved signal-to-noise ratio. It also has a high switching speed, which makes it ideal for high frequency applications. The SSM6N44FE,LM offers better temperature stability than most other FETs and has high-speed switching capability.The SSM6N44FE,LM has a variety of features which make it a popular choice for many applications. It has an improved on-resistance, which means that it can be used for higher power applications. The chip also has a higher switching speed and a low input capacitance, which are both important when selecting a FET. Its high power efficiency also makes it suitable for use in switching regulators and other power conversion applications.The SSM6N44FE, LM is an ideal choice for many applications, as it offers increased circuit efficiency and improved reliability. Its compact size, high performance, and low manufacturing cost make it an attractive choice for a wide variety of applications. It further enables the design of sophisticated electronic systems at reduced cost.From the above-mentioned points, it is clear that the SSM6N44FE,LM a is a field effect transistor array that has many benefits. It is versatile, offers high input impedance, and has a relatively low manufacturing cost. Furthermore, its high power efficiency, low input capacitance and high switching speed make it an attractive option for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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