Allicdata Part #: | TK14A55D(STA4QM)-ND |
Manufacturer Part#: |
TK14A55D(STA4,Q,M) |
Price: | $ 2.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 550V 14A TO-220SIS |
More Detail: | N-Channel 550V 14A (Ta) 50W (Tc) Through Hole TO-2... |
DataSheet: | TK14A55D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.84855 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 370 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK14A55D(STA4,Q,M) is a power semiconductor device designed for a variety of applications. It is classified as a single MOSFET power transistor, with special industrial and automotive applications. The TK14A55D(STA4,Q,M) offers superior performance and reliability, and is also designed to optimize size and weight.
The TK14A55D(STA4,Q,M) acts as a switch within an electrical circuit, opening and closing when a specific voltage threshold is reached. A MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, is a three-terminal device comprising source, gate, and drain. A gate voltage is needed to control the electric current of the MOSFET, and it is connected to the source and the drain.
The major difference between a bipolar junction transistor (BJT) and a MOSFET is that the gate of a MOSFET is electrically insulated from the rest of the device, making it possible to use voltages between the gate and the source, bypassing the drain. This allows for the use of higher voltages for operation, to provide superior power handling and switching capabilities. The gate voltage also changes the width of the conductive channel, allowing for effective current control.
The TK14A55D(STA4,Q,M) is specifically designed for use in the automotive industry. It can be used to control electric loads such as fans, pumps, and other motor-driven systems. Other industrial applications include controlling motors, automation equipment, and high power switches.
The TK14A55D(STA4,Q,M) also offers superior on resistance, which is a measure of the resistance of the MOSFET when it is turned on. On resistance is defined as the ratio of the drain-to-source voltage to the drain current. The lower the on resistance, the easier it is for the MOSFET to switch, resulting in higher electrical efficiency.
The TK14A55D(STA4,Q,M) is highly reliable in most operating conditions and can be used in environments with high temperatures and heavy current loadings without suffering any damage. It is also physically small, making it perfect for use in space-restricted applications.
In summary, the TK14A55D(STA4,Q,M) is a power MOSFET ideal for industrial and automotive applications. It offers superior on resistance and low thermal resistance, greater power handling and less audible noise. With its small size and high reliability, the TK14A55D(STA4,Q,M) is the perfect choice for a variety of applications, and is a cost-effective power switch for both industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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