Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SSM3K345RLFTR-N D	SSM3K345R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	6000 Order	3000+: $0.0587
RN2109MFVL3F-ND	RN2109MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
RN2607(TE85LF)T R-ND	RN2607(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
RN1104ACT(TPL3) TR-ND	RN1104ACT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
RN2105MFVL3F-ND	RN2105MFV,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	1+: $0
2SC4738-BL(TE85 LFTR-ND	2SC4738-BL(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
SSM3J352FLFTR-N D	SSM3J352F,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V Power Dissipation (Max): 1.2W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	3000+: $0.0623
TK31V60W5LVQTR- ND	TK31V60W5,LVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Power Dissipation (Max): 240W (Tc) Operating Temperature: 150C (TA) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	1000 Order	2500+: $1.3538
2SA1869-YQ(J-ND	2SA1869-Y,Q(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC3665-Y(T2NSW FM-ND	2SC3665-Y(T2NSW ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
2SC6040T2Q(J-ND	2SC6040,T2Q(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
2SD2129ALPSQ(M- ND	2SD2129,ALPSQ(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 100A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V Power - Max: 2W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SK2883(TE24L,Q )-ND	2SK2883(TE24L,Q )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power Dissipation (Max): 75W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TK16A55D(STA4QM )-ND	TK16A55D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
1SS388(TL3FD)-N D	1SS388(TL3,F,D)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 5A @ 10V Capacitance @ Vr, F: 18pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: -40C ~ 100C	1000 Order	1+: $0
TK5A55D(STA4QM) -ND	TK5A55D(STA4,Q, M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $0.8114
TCK305GLFTR-ND	TCK305G,LF	Toshiba Semiconductor and Storage	View more Series: TCK30 Packaging: Tape & Reel (TR) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 2.3 V ~ 28 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Rds On (Typ): 73 mOhm Features: Slew Rate Controlled, Status Flag Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Operating Temperature: -40C ~ 85C (TA) Package / Case: 9-UFBGA, CSPBGA Supplier Device Package: 9-WCSP (1.5x1.5)	10000 Order	5000+: $0.284 10000+: $0.2734
TCK303GLFTR-ND	TCK303G,LF	Toshiba Semiconductor and Storage	View more Series: TCK30 Packaging: Tape & Reel (TR) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 2.3 V ~ 28 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Rds On (Typ): 73 mOhm Features: Slew Rate Controlled, Status Flag Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Operating Temperature: -40C ~ 85C (TA) Package / Case: 9-UFBGA, CSPBGA Supplier Device Package: 9-WCSP (1.5x1.5)	1000 Order	5000+: $0.3352 10000+: $0.3226
TB6641FG8ELTR-N D	TB6641FG,8,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel, PWM Technology: Power MOSFET Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 45 V Voltage - Load: 10 V ~ 45 V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Supplier Device Package: 16-SOP	1000 Order	1500+: $0.8313 3000+: $0.774 7500+: $0.7453
TC75S56FLFTR-ND	TC75S56F,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: General Purpose Number of Elements: 1 Output Type: Push-Pull Voltage - Supply, Single/Dual (): 1.8 V ~ 7 V, 0.9 V ~ 3.5 V Voltage - Input Offset (Max): 1mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Current - Quiescent (Max): 22A Propagation Delay (Max): 680ns Operating Temperature: -40C ~ 85C Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Supplier Device Package: SMV	3000 Order	3000+: $0.0884 6000+: $0.083 15000+: $0.0776 30000+: $0.0712 75000+: $0.0685
TC74AC138FTELTR -ND	TC74AC138FTEL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Type: Decoder Circuit: 1 x 3:8 Independent Circuits: 1 Current - Output High, Low: 75mA, 75mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	2000 Order	2000+: $0.124
TC7MBL3257CFT(E L)TR-ND	TC7MBL3257CFT(E L)	Toshiba Semiconductor and Storage	View more Series: TC7MB Packaging: Tape & Reel (TR) Part Status: Active Type: Multiplexer/Demultiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Voltage Supply Source: Single Supply Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP Base Part Number: 7MBL3257	1000 Order	2000+: $0.0977
TLP4176G(F)-ND	TLP4176G(F)	Toshiba Semiconductor and Storage	View more Series: TLP4176G Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NC (1 Form B) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 25 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	13 Order	1+: $1.5309 10+: $1.3532 25+: $1.0042 100+: $0.8732 300+: $0.7859 500+: $0.6985 1000+: $0.6003 2500+: $0.5676 5000+: $0.5457
TLP170A(TP,F)-N D	TLP170A(TP,F)	Toshiba Semiconductor and Storage	View more Series: TLP170A Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 60V Load Current: 400mA On-State Resistance (Max): 2 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	2500+: $0.4938
TLP4192G(F)-ND	TLP4192G(F)	Toshiba Semiconductor and Storage	View more Series: TLP4192G Packaging: Tube Part Status: Obsolete Mounting Type: Surface Mount Circuit: SPST-NC (1 Form B) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 90mA On-State Resistance (Max): 50 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	--
CRZ12(TE85LQM)- ND	CRZ12(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 12V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 8V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	1000 Order	3000+: $0.1118
CBS10F40L3F-ND	CBS10F40,L3F	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 20A @ 40V Capacitance @ Vr, F: 74pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2B Operating Temperature - Junction: 150C (Max)	1000 Order	10000+: $0.0413
CRS15I30A(TE85L QM-ND	CRS15I30A(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 60A @ 30V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.083
TB6603FTG8EL-ND	TB6603FTG,8,EL	Toshiba Semiconductor and Storage	View more Part Status: Obsolete Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Load: 30V Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-QFN (6x6)	1000 Order	1+: $0
RN1303(TE85LF)T R-ND	RN1303(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	1+: $0
RN1314(TE85LF)T R-ND	RN1314(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: RN131*	1000 Order	3000+: $0.0304
TPC6901(TE85LFM )-ND	TPC6901(TE85L,F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 1A, 700mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V Power - Max: 400mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: VS-6 (2.9x2.8)	1000 Order	3000+: $0.1497
TC7SB66CFULFTR- ND	TC7SB66CFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 7 Ohm Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1A Operating Temperature: -40C ~ 85C (TA) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	6000 Order	3000+: $0.0491 6000+: $0.0442
TB67S265FTGELTR -ND	TB67S265FTG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Motor Type - Stepper: Bipolar Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel, Serial Technology: Power MOSFET Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 47 V Operating Temperature: -20C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	4000 Order	4000+: $0.7229 8000+: $0.6962
RN1102LF(CTTR-N D	RN1102,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	3000 Order	3000+: $0.0228 6000+: $0.0198 15000+: $0.0169 30000+: $0.0159 75000+: $0.0149 150000+: $0.0132
2SA1428-YT2F(J- ND	2SA1428-Y,T2F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
2SA1972F(J-ND	2SA1972,F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V Power - Max: 900mW Frequency - Transition: 35MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2655-YT6APNF (M-ND	2SC2655-Y,T6APN F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TK31N60W5S1VF-N D	TK31N60W5,S1VF	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99 mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Power Dissipation (Max): 230W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $4.662 30+: $3.8245 120+: $3.4514 510+: $2.8917 1020+: $2.5185
TPCC8093L1Q-ND	TPCC8093,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 500A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V Power Dissipation (Max): 1.9W (Ta), 30W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.1487

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