Allicdata Part #: | 2SD2129ALPSQ(M-ND |
Manufacturer Part#: |
2SD2129,ALPSQ(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 3A 100V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 2W Through H... |
DataSheet: | 2SD2129,ALPSQ(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 12mA, 3A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1.5A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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ALPSQ (M) application field and working principle can be classified under Transistors—Bipolar (BJT)—Single. ALPSQ (M) is bipolar transistor, which is a semiconductor type represented by two different layers: P-type and N-type. As a small signal transistor, The 2SD2129 Japanese-made ALPSQ (m) can be used for low frequency audio power amplifiers, video applications and bias circuits.
TheALPSQ (M) has a Vce (collector-emitter voltage) rating of 40V, Vcb (collector-base voltage) rating of 40V, an Ic (collector current) rating of 1A and a ft (transition frequency) rating of 100Mhz. It is available in a TO-92 package. The ALPSQ (M) also has current gain ratings of 160, 200 and 160 respectively for hFE, hFE2 and hFE3.
The working principle of the ALPSQ (M) is based on the theory of operation for bipolar transistors. The main objective of the transistor is to control the flow of current from one junction to the other. The current flows from the base (B) of the transistor, through the emitter (E) and then to the collector (C). It is controlled by the amount of base current applied to the transistor.
Current flow is initiated by increasing the base current, this causes an increase in the electron current through the base/emitter junction. This increases the collector current, leading to an amplification of the signal. The electrons from the emitter junction inject holes into the base region, reducing the potential barrier between the collector and base regions. This causes the majority current carriers to move freely between the two regions, producing a current flow.
The amount of current flow between the emitter and collector regions, is proportional to the base current. Increasing the base current further, increases the collector current and the transistor is said to be in saturation. This is when the collector current is at its maximum and the collector-emitter voltage is at its minimum. The exact gain of the transistor is controlled by the ratio of the collector current to the base current.
The ALPSQ (M)is an ideal choice for low-frequency audio amplification applications and other small signal applications. Its low Vce (collector-emitter voltage) rating of 40V and Ic (collector current) rating of 1Ap make it an efficient, cost-effective device for low-power applications. Its wide range of hFE ratings allow for precision tuning of current gain, allowing engineers to achieve the desired results within their design.
In summation, the 2SD2129 Japanese-made ALPSQ (M) is a high-quality small signal bipolar transistor available in a TO-92 package. It is primarily used for low-frequency audio amplification applications and other small signal applications. Its wide range of hFE ratings allow for precise tuning of current gain and its low Vce (collector-emitter voltage) and Ic (collector current) ratings make it an ideal choice for low-power applications.
The specific data is subject to PDF, and the above content is for reference
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