RN1303(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1303(TE85LF)TR-ND

Manufacturer Part#:

RN1303(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1303(TE85L,F) datasheetRN1303(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

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RN1303 (TE85L, F) is a single pre-biased bipolar junction transistor (BJT) type of transistor. It is an N-channel transistor, which is widely used in modern day electronics. This type of transistor has an N-type substrate, which provides good insulation for the transistor. The substrate, along with an integrated resistor network, makes this transistor ideal for use in applications which require low power consumption.

This transistor is typically used in switching circuits, amplifier circuits, and other low power applications. It has a low input and low output capacity. This makes it ideal for use in applications which require a low to moderate current load. It is also commonly used in power amplifiers, digital signal processors, and audio circuits.

When it comes to its working principle, the RN1303 (TE85L, F) is a current controlled device. The input current that is applied to the base of the transistor determines the output current that is allowed to flow through the collector to the emitter. This type of transistor is considered pre biased because the base-emitter voltage is already set when it is soldered onto a circuit board. This type of transistor is commonly used in the construction of amplifiers and other electronic components.

The RN1303 (TE85L, F) is also known for its excellent thermal performance. This is due to the use of best-in-class materials for its transistors. This increases the reliability of the device, as it can tolerate higher temperature environments without degradation. The thermal performance of this device is important because it allows it to perform better in high temperature applications. Consequently, it is ideal for use in high power applications.

In conclusion, the RN1303 (TE85L, F) is a single pre-biased bipolar junction transistor (BJT) type of transistor. Its low-power consumption and pre-biased design make it ideal for use in various applications, such as switching circuits, amplifier circuits, power amplifiers, digital signal processors, and audio circuits. In addition, its excellent thermal performance allows it to be used in high temperature applications.

The specific data is subject to PDF, and the above content is for reference

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