SSM3J352F,LF Allicdata Electronics
Allicdata Part #:

SSM3J352FLFTR-ND

Manufacturer Part#:

SSM3J352F,LF

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 SMALL LOW ON RESISTANCE PCH
More Detail: P-Channel 20V 2A (Ta) 1.2W (Ta) Surface Mount S-Mi...
DataSheet: SSM3J352F,LF datasheetSSM3J352F,LF Datasheet/PDF
Quantity: 3000
3000 +: $ 0.06231
Stock 3000Can Ship Immediately
$ 0.07
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power Dissipation (Max): 1.2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Series: U-MOSVI
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM3J352F,LF is a type of transistor, more specifically, a Field-Effect Transistor, or FET. This type of transistor works differently than the comparatively simple bipolar transistors, as FETs are typically used for more complex circuitry and more sophisticated applications. The SSM3J352F,LF is a single-channel MOSFET, meaning it has only one operating channel as opposed to many. This specific transistor is part of a line of FETs called "VinFETs", produced by the company Vishay.

FETs have various applications in electronics, and the SSM3J352F,LF is most typically used in switch and level shifter circuits. Because of its single-channel MOSFET design, the SSM3J352F,LF is able to handle higher levels of power than most other FETs, making it ideal for such applications. As such, it is commonly used in power-conversion circuits, as well as in audio amplifiers, motor controllers, and other power control circuits.

The basic principle behind the operation of FETs is called the "gate effect", in which an electric field is created by an applied voltage. This electric field will cause the resistance of the channel between the source and the drain to change based on the voltage, creating a current flow through the transistor. As such, FETs are often used in circuits where high-frequency switching is required, as well as for high-current switching operations.

The SSM3J352F,LF consists of a single N-Channel MOSFET, with a drain-to-source voltage of 30 V and a drain-current of 4 A. Though it is classified as a single-channel MOSFET, the SSM3J352F,LF actually has two gates. The first gate, called the gate-drain, is connected to a resistor, while the second gate, called the gate-source, is connected directly to the source. This connection allows the SSM3J352F,LF to receive an input voltage, which can then be used to control the channel resistance and thus the current flow through the transistor.

The SSM3J352F,LF is designed for high-frequency switching operations and is well-suited for use in switch and level shifter circuits. The dual-gate connection also makes it ideal for use in logic control circuits, as the two gates can be used to create logic functions. This feature makes the SSM3J352F,LF a versatile and highly capable transistor for many types of circuit designs.

The SSM3J352F,LF is an excellent choice for many different applications in electronics, and is particularly well-suited for switch and level shifter circuits. Its dual-gate connection makes it suitable for use in logic-control circuits, while the large drain-source voltage rating make it ideal for high-power applications. All in all, the SSM3J352F,LF is an excellent choice of FET for many different types of circuit designs.

The specific data is subject to PDF, and the above content is for reference

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