Storage logic trigger - Allicdata Electronics

Related Categories

< 146 147 148 149 150 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TPH4R003NLL1QTR -ND	TPH4R003NL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Power Dissipation (Max): 1.6W (Ta), 36W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.2717
TPHR9003NLL1QTR -ND	TPHR9003NL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 15V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.6122
2SA1930(LBS2MAT QM-ND	2SA1930(LBS2MAT Q,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SA1930(ONKQM)- ND	2SA1930(ONK,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC5171(ONKQM)- ND	2SC5171(ONK,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC5171Q(J-ND	2SC5171,Q(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
TBAT54SLMTR-ND	TBAT54S,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 200mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 1.5ns Current - Reverse Leakage @ Vr: 2A @ 25V Operating Temperature - Junction: -55C ~ 150C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	30000 Order	3000+: $0.0236 6000+: $0.0213 15000+: $0.0185 30000+: $0.0167 75000+: $0.0148 150000+: $0.0123
TPC8042TE12LQMT R-ND	TPC8042(TE12L,Q ,M)	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
CBS05F30L3FTR-N D	CBS05F30,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 50A @ 30V Capacitance @ Vr, F: 118pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2B Operating Temperature - Junction: 125C (Max)	20000 Order	10000+: $0.0633 30000+: $0.0582
CRS15I30B(TE85L QM-ND	CRS15I30B(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1.5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.083
1SS301SULFTR-ND	1SS301SU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Base Part Number: 1SS301	1000 Order	1+: $0
TLP5771(TPETR-N D	TLP5771(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1A, 1A Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, cUR, UR, VDE	1500 Order	1500+: $0.6194 3000+: $0.5856 7500+: $0.5631 10500+: $0.5518
TLP2601F-ND	TLP2601(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/s Input Type: DC Output Type: Open Collector, Schottky Clamped Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	50+: $0.8143
TB6604FTG8EL-ND	TB6604FTG,8,EL	Toshiba Semiconductor and Storage	View more Part Status: Obsolete Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Load: 30V Mounting Type: Surface Mount Supplier Device Package: 48-QFN	1000 Order	1+: $0
TC75W70L8XLFTR- ND	TC75W70L8X,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: General Purpose Number of Elements: 2 Output Type: Push-Pull Voltage - Supply, Single/Dual (): 1.3 V ~ 5.5 V Voltage - Input Offset (Max): 6mV @ 3V Current - Input Bias (Max): 1pA @ 3V Current - Output (Typ): 18mA @ 3V Current - Quiescent (Max): 47A Propagation Delay (Max): 800ns Operating Temperature: -40C ~ 85C Package / Case: 8-UFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: SOT-902	1000 Order	1+: $0
SSM6J507NULFTR- ND	SSM6J507NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	42000 Order	3000+: $0.1123
SSM3K56FSLFTR-N D	SSM3K56FS,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	15000 Order	3000+: $0.0478
RN2119MFV(TPL3) TR-ND	RN2119MFV(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM Base Part Number: RN211*	1000 Order	1+: $0
2SK3078A(TE12LF )CT-ND	2SK3078A(TE12L, F)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: N-Channel Frequency: 470MHz Gain: 8dB Voltage - Test: 4.5V Current Rating: 500mA Current - Test: 50mA Power - Output: 28dbm Voltage - Rated: 10V Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1+: $0
2SC5086-OLFTR-N D	2SC5086-O,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0538 6000+: $0.0511 15000+: $0.049 30000+: $0.0477 75000+: $0.0461
RN1103MFV(TPL3) -ND	RN1103MFV(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM Base Part Number: RN110*	1000 Order	8000+: $0.0278
HN1C01F-GR(TE85 LFCT-ND	HN1C01F-GR(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 800MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	63 Order	1+: $0.2583 10+: $0.184 25+: $0.1431
TB67H301FTGELTR -ND	TB67H301FTG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: BiCDMOS Applications: General Purpose Current - Output: 1A Voltage - Supply: 3 V ~ 5.5 V Voltage - Load: 4.5 V ~ 38 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-WFQFN Exposed Pad Supplier Device Package: 24-WQFN (4x4)	5000 Order	5000+: $0.4505 10000+: $0.4331
SSM6J212FELFTR- ND	SSM6J212FE,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	1000 Order	4000+: $0.1123
TPC6111(TE85LFM )TR-ND	TPC6111(TE85L,F ,M)	Toshiba Semiconductor and Storage	View more Series: U-MOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	3000+: $0.1628
TK62J60WS1VQ-ND	TK62J60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38 mOhm @ 30.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 400W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	86 Order	1+: $10.7604 25+: $9.0473 100+: $8.3137
SSM3J306T(TE85L F)TR-ND	SSM3J306T(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 117 mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 15V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
2SC2229-O(TE6FM )-ND	2SC2229-O(TE6,F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2229-Y(SAN2F M-ND	2SC2229-Y(SAN2, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-YT6F(J- ND	2SC2235-Y,T6F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC5201(TE6FM)- ND	2SC5201(TE6,F,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TTC009F(M-ND	TTC009,F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SK3565QM-ND	2SK3565(Q,M)	Toshiba Semiconductor and Storage	View more Series: -MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
SSM3K106TU(TE85 L)TR-ND	SSM3K106TU(TE85 L)	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 310 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	1000 Order	1+: $0
1SS307EL3FTR-ND	1SS307E,L3F	Toshiba Semiconductor and Storage	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 10nA @ 80V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SC-79 Operating Temperature - Junction: 150C (Max)	1000 Order	8000+: $0.0198 16000+: $0.0172 24000+: $0.0155 56000+: $0.0138 200000+: $0.0115
TC7SP3125TULFTR -ND	TC7SP3125TU,LF	Toshiba Semiconductor and Storage	View more Series: TC7SP Packaging: Tape & Reel (TR) Part Status: Obsolete Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Output Type: Tri-State, Non-Inverted Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	1000 Order	1+: $0
74HC4052DTR-ND	74HC4052D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 130 Ohm Channel-to-Channel Matching (Ron): 4 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Switch Time (Ton, Toff) (Max): 34ns, 32ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1A Crosstalk: -50dB @ 1MHz Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	5000 Order	--
TC4W53FUTE12LFC T-ND	TC4W53FUTE12LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Discontinued at Digi-Key Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of Channels: 2 On-State Resistance (Max): 160 Ohm Voltage - Supply, Single (V+): 3 V ~ 18 V Operating Temperature: -40C ~ 85C (TA) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-SSOP Base Part Number: 4W53	1000 Order	--
TL1F2-DW0LTR-ND	TL1F2-DW0,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 6500K Flux @ 25C, Current - Test: 133 lm (120 lm ~ 145 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 133 lm/W CRI (Color Rendering Index): 70 Current - Max: 550mA Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 2020 (5050 Metric) Supplier Device Package: 6450 Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Height - Seated (Max): 0.057" (1.45mm) Thermal Resistance of Package: 8C/W	1000 Order	1+: $0
TLP3107(F-ND	TLP3107(F	Toshiba Semiconductor and Storage	View more Series: TLP3100 Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 60V Load Current: 3.3A On-State Resistance (Max): 60 mOhms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	75+: $1.4824

< 146 147 148 149 150 >

Hot Searches: storage logic trigger logic trigger device maxim logic trigger nexperia logic trigger nxp logic trigger anselmi logic trigger renesas logic trigger torex logic trigger toshiba logic trigger 100e logic trigger 100el logic trigger 100ep logic trigger 100es logic trigger 100lvel logic trigger 100s logic trigger 10e logic trigger 10el logic trigger 10ep logic trigger 17sz logic trigger 74ac logic trigger

Search Result:storage logic trigger

Related Categories