Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TCR2EF15LM(CTTR -ND	TCR2EF15,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.5V Voltage Dropout (Max): 0.39V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	3000 Order	3000+: $0.0378 6000+: $0.034 15000+: $0.0302 30000+: $0.0284 75000+: $0.0251 150000+: $0.0242
TK56E12N1S1X-ND	TK56E12N1,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 60V Power Dissipation (Max): 168W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	50+: $1.0021
SSM3J114TU(T5LT )TR-ND	SSM3J114TU(T5L, T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 149 mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	1000 Order	1+: $0
TPCA8026TE12LQM TR-ND	TPCA8026(TE12L, Q,M	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	9000 Order	3000+: $0.6221
TPN2R203NCL1QTR -ND	TPN2R203NC,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 500A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.3055
TTC012(Q)-ND	TTC012(Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V Power - Max: 1.1W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PW-MOLD2	1000 Order	200+: $0.4797
TK25A60X5S5X-ND	TK25A60X5,S5X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	147 Order	1+: $3.3579 50+: $2.6996 100+: $2.4595 500+: $1.9916 1000+: $1.6797
2SA1244-Y(Q)-ND	2SA1244-Y(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Power - Max: 1W Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	1000 Order	1+: $0
2SA1020AT6CSF(J -ND	2SA1020A,T6CSF( J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1020-O(TE6FM )-ND	2SA1020-O(TE6,F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2229-Y(T6ONK 1FM-ND	2SC2229-Y(T6ONK 1FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-OF(J-ND	2SC2235-O,F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC3672-O(T2ASH FM-ND	2SC3672-O(T2ASH ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
TPC6104(TE85L,F ,M)-ND	TPC6104(TE85L,F ,M)	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
TPCC8001-H(TE12 LQMTR-ND	TPCC8001-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Series: U-MOSV-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TPCP8004(TE85LF )TR-ND	TPCP8004(TE85L, F)	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Power Dissipation (Max): 840mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
CCS15F40L3FTR-N D	CCS15F40,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 640mV @ 1.5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 25A @ 40V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: CST2C Operating Temperature - Junction: 150C (Max)	1000 Order	10000+: $0.0455 30000+: $0.0427 50000+: $0.0379
RN1412TE85LFTR- ND	RN1412TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
HN4B01JE(TE85LF )TR-ND	HN4B01JE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN, PNP (Emitter Coupled) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	1000 Order	1+: $0
HN1C03FU-A(TE85 LFTR-ND	HN1C03FU-A(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Power - Max: 200mW Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
RN2909FE(TE85LF )TR-ND	RN2909FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.041
RN4901LF(CTTR-N D	RN4901,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.032
RN1969FE(TE85LF )TR-ND	RN1969FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
RN2902LFTR-ND	RN2902,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
TLP2098(F)-ND	TLP2098(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/s Input Type: AC, DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 25mA Data Rate: 5Mbps Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 3 V ~ 20 V Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	734 Order	1+: $3.1185 10+: $2.5988 25+: $2.1831 150+: $1.8711 300+: $1.6632 600+: $1.5073
TLP5751(D4-TPET R-ND	TLP5751(D4-TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1A, 1A Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL, VDE	1000 Order	1500+: $0.6661
TLP2309(TPLE)TR -ND	TLP2309(TPL,E)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 15% @ 16mA Turn On / Turn Off Time (Typ): 1s, 1s (Max) Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	3000+: $0.2581 6000+: $0.2523 15000+: $0.2426
TLP292(GB-TPLET R-ND	TLP292(GB-TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.0915 5000+: $0.0832 12500+: $0.0776 25000+: $0.0748 62500+: $0.0721
TRS8E65CS1Q-ND	TRS8E65C,S1Q	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90A @ 650V Capacitance @ Vr, F: 44pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175C (Max)	1000 Order	50+: $4.9497
CLS02(TE16RQ)-N D	CLS02(TE16R,Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
TLP3100(F)-ND	TLP3100(F)	Toshiba Semiconductor and Storage	View more Series: TLP3100 Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 20V Load Current: 2.5A On-State Resistance (Max): 50 mOhms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	1+: $4.6872 10+: $4.3943 25+: $3.906 75+: $3.7107 150+: $3.5154 300+: $3.1248 525+: $2.9295 1050+: $2.7342
TLP3547(F-ND	TLP3547(F	Toshiba Semiconductor and Storage	View more Series: TLP3547 Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.64VDC Voltage - Load: 0V ~ 60V Load Current: 5A On-State Resistance (Max): 50 mOhms Termination Style: PC Pin Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	50+: $4.1057
TC35661SBG-203E LTR-ND	TC35661SBG-203, EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Type: TxRx Only RF Family/Standard: Bluetooth Protocol: Bluetooth v3.0 Frequency: 2.4GHz Data Rate (Max): 2Mbps Power - Output: 2dBm Sensitivity: -90dBm Serial Interfaces: IC, SPI, UART Voltage - Supply: 1.8 V ~ 3.3 V Current - Receiving: 63mA Current - Transmitting: 63mA Operating Temperature: -40C ~ 85C Package / Case: 64-FBGA	1000 Order	2000+: $1.5082
TCR2EE115LM(CTT R-ND	TCR2EE115,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.15V Voltage Dropout (Max): 0.67V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	1000 Order	1+: $0
TLP170D(F)-ND	TLP170D(F)	Toshiba Semiconductor and Storage	View more Series: TLP170D Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 200V Load Current: 200mA On-State Resistance (Max): 8 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	1+: $0.8631 10+: $0.8083 25+: $0.7182 50+: $0.6823 100+: $0.6464 300+: $0.5746 500+: $0.5387 1000+: $0.5027 5000+: $0.4848
TLP3403R(TPFTR- ND	TLP3403R(TP,F	Toshiba Semiconductor and Storage	View more Series: TLP3403R Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.8VDC Voltage - Load: 0V ~ 20V Load Current: 1A On-State Resistance (Max): 220 mOhms Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.108", 2.75mm) Supplier Device Package: 4-VSONR	1000 Order	3000+: $1.1752
TK5A65WS5X-ND	TK5A65W,S5X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	157 Order	1+: $1.1718 50+: $0.9352 100+: $0.8183 500+: $0.6346 1000+: $0.501
2SA1837NSEIKIF( J-ND	2SA1837,NSEIKIF (J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC2655-YT6KEHF (M-ND	2SC2655-Y,T6KEH F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SD2206A(T6SEPF M-ND	2SD2206A(T6SEP, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0

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