1N3046BUR-1

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	120V
Tolerance:	±5%
Power - Max:	1.5W
Impedance (Max) (Zzt):	550 Ohms
Current - Reverse Leakage @ Vr:	10µA @ 91.2V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AB, MELF
Supplier Device Package:	DO-213AB
Base Part Number:	1N3046

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Diodes - Zener - Single

1N3046BUR-1 is a specialized type of diode that has unique characteristics that make it suitable for certain applications. This type of diode, commonly known as Zener diodes, are used most frequently when it is necessary to create a stabilizing voltage within an electrical circuit.The 1N3046BUR-1 has the ability to easily control the current within its terminals, depending upon the environmental conditions in which it is used. This enables efficient operation of the diode, by allowing it to regulate the current across its terminals as needed.The 1N3046BUR-1 is able to regulate the current because it relies upon a breakdown voltage. The breakdown voltage is the voltage at which the diode will begin to conduct a current. Once this voltage is reached, the diode will then control the amount of current that passes through it. This is the primary benefit of Zener diodes, as they are able to maintain a stable voltage even when the current through them is variable.Due to its unique ability to provide a consistent voltage, regardless of the voltage of the source power, the 1N3046BUR-1 is used in a wide range of applications. It is commonly used in power supplies to provide over-voltage protection, or to limit the voltage output of a given circuit. It is also often used in radio frequency circuits, where it can help to control oscillations and ensure stable operation.The structure of the 1N3046BUR-1 plays an important role in the way it works. This type of diode is a p-n junction diode, which consists of two doped semiconductor regions sandwiched together. It has a doping region of p-type material on one side and an n-type material on the other.When a voltage is applied to the diode, electrons move to the p-type material. This creates a negative charge, pulling the diode’s electrons to the n-type side resulting in a diode depletion region with a strong electric field. The electrons then move away from the n-type side and the electrons pass through the junction.The 1N3046BUR-1 is also equipped with a Zener barrier that helps regulate the current. The Zener barrier is a semiconductor material that forms at the junction between the p-type and n-type materials. The Zener barrier creates a barrier between the two materials, which serves to regulate the flow of current between the two.The 1N3046BUR-1 is designed to work within a certain voltage range. This range can vary depending upon the model and the particular application. Generally, the 1N3046BUR-1 will work within a range of 6.8 v up to 9.3 v. This range ensures that the current is regulated properly and that the voltage is maintained within a certain range.In summary, the 1N3046BUR-1 is a specialized type of diode that is used to control the current within its terminals due to its unique breakdown voltage. It is able to provide a constant voltage even when the current through it is variable, making it ideal for use in power supplies, radio frequency circuits and more. The 1N3046BUR-1 is composed of two semiconductor doped regions and a Zener barrier, which help to regulate the current that passes through the diode, ensuring that it works within a specified voltage range.

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