Allicdata Part #: | 1N3004B-ND |
Manufacturer Part#: |
1N3004B |
Price: | $ 17.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 91V 10W DO213AA |
More Detail: | Zener Diode 91V 10W ±5% Chassis, Stud Mount DO-213... |
DataSheet: | 1N3004B Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 15.33260 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 91V |
Tolerance: | ±5% |
Power - Max: | 10W |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 69.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 2A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-213AA |
Base Part Number: | 1N3004 |
Description
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1N3004B Application Field and Working Principle
The 1N3004B is a single Zener diode. It’s widely used in various applications and provides reliable and stable operation due to its Zener characteristic- that provides a wide reverse voltage range and low forward voltage drop. This diode is widely used for clamping, protection and sampling application in products such as amplifiers, computer systems, smartphones, televisions, automotive electronics and many more.Overview of 1N3004B
The 1N3004B is a zener diode, which is a diode designed to operate in the reverse breakdown region. It is made from a lightly doped p-type semiconductor material, sandwiched between two n-type materials. It has a low forward voltage drop of typically 0.4V and a wide range of reverse breakdown voltages from 2V up to 500V. In addition, this diode has a low temperature coefficient of typically 0.2%.1N3004B Working Principle
The working principle of the 1N3004B diode is very simple. When the diode is in its forward bias (positive battery on anode and negative on cathode or vice versa), the diode allows current to flow as long as it is not exceeding the breakdown voltage. When the voltage applied to the diode is higher than the breakdown voltage, the diode will start to conduct, allowing current to flow in the reverse direction, which is the breakdown region. This is because the doped semiconductor material in the diode is lightly doped and it has a higher concentration of mobile carriers compared with the lightly doped material. Therefore, the potential barrier is less and it allows the current to flow through the diode.Uses of 1N3004B
The 1N3004B diode has a wide range of applications. The most common applications include clamping, protection, and sampling. Clamping: The 1N3004B can be used to clamp voltages and protect sensitive machines, such as a laptop or any other devices, from harm. When the voltage applied to the machine exceeds a certain threshold, the diode begins to conduct, allowing the excess current to go around the machine and be dissipated as heat. Protection: The diode also protects sensitive devices by limiting the current flowing through them. When the current reaches a certain level, the diode becomes forward-biased, allowing the current to flow through the diode and prevent it from overwhelming the device. Sampling: The 1N3004B can be used to measure the voltage of a system, such as the voltage in a car’s battery. The diode is connected in reverse to the system and the voltage seen on the diode is then used to calculate the voltage of the system.Conclusion
The 1N3004B is a single Zener diode that has a wide range of applications. It has a low forward voltage drop and a wide range of reverse breakdown voltages. It is widely used for clamping, protection and sampling applications in products such as amplifiers, computer systems, smartphones, televisions, automotive electronics and many more. The working principle of the diode is relatively simple, and it is reliable and stable in operation.The specific data is subject to PDF, and the above content is for reference
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