
Allicdata Part #: | 1N5621US-ND |
Manufacturer Part#: |
1N5621US |
Price: | $ 9.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 800V 1A D5A |
More Detail: | Diode Standard 800V 1A Surface Mount D-5A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 8.88391 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 300ns |
Current - Reverse Leakage @ Vr: | 500nA @ 800V |
Capacitance @ Vr, F: | 20pF @ 12V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | D-5A |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes have been a part of electronics for many years and are used in many different ways. One common use of diodes is as rectifiers, or devices that convert alternating current (AC) to direct current (DC). The 1N5621US is a single rectifier diode with a variety of applications. This article will discuss the application field and working principle of the 1N5621US and its eneficial parts.
Application Field of the 1N5621US
The 1N5621US rectifier diode is used in a variety of applications. One of the main uses of the device is for controlling and regulating the flow of DC current in power supplies. It is often used in radio receivers, amplifiers, and other electronic circuits that draw current and require a stable output. The 1N5621US is also useful in low-noise applications and it is often used in the automotive and aviation industries.
The diode is also used in the manufacturing and printing industry, as it helps maintain stable DC currents for the production of materials such as plastic. Finally, the 1N5621US can be used in experimental applications due to its ability to control and maintain a low-noise environment for experimentation.
Working Principle of the 1N5621US
The 1N5621US rectifier diode operates using a principle that is known as rectification. This process allows the diode to convert alternating current (AC) into a direct current (DC). Before the current reaches the diode, it alternates between positive and negative. When the current reaches the diode, however, the diode only allows the positive part of the current to pass through, thus blocking the negative portion of the current.
The diodes are made up of two semiconductors, which are joined together and act as a barrier. When the alternating current reaches the diode, the negative part is blocked and only the positive part is allowed to pass through. This process is reversed when the current switches polarity. Once the current has passed through the diode, what is left is a pure DC current that can now be used in a variety of applications.
Beneficial Parts of the 1N5621US
The 1N5621US diode rectifier has several beneficial parts. One of the most important aspects is its low-noise operation, which makes it ideal for noise-sensitive applications such as aviation and automotive systems. It also features a high recovery rate from reverse breakdown, meaning that it has a fast response time when returning to its normal state after a surge of current. This is important for situations where quick current regulation is required.
The 1N5621US also has a wide operating temperature range, allowing it to be used in a variety of environments. The device is also designed to require less reverse voltage during operation than other rectifier diodes, which can reduce power supply costs and make the diode more efficient.
Conclusion
The 1N5621US single rectifier diode can be used in a variety of applications which require stable, low-noise DC current. It uses a process called rectification which is based on two semiconductors that act as a barrier to alternating current. The device is also equipped with beneficial parts that ensure fast response time and low-noise operation. This makes it an invaluable tool for many industries, from automobile and aviation to manufacturing and printing.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5618GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5660A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 111V 179V DO13 |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
1N5662A | Microsemi Co... | 15.37 $ | 74 | TVS DIODE 136V 219V DO13 |
1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5633A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 8.55V 14.5V DO1... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
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