1N5631A Allicdata Electronics

1N5631A Circuit Protection

Allicdata Part #:

1N5631AMS-ND

Manufacturer Part#:

1N5631A

Price: $ 11.88
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 7.02V 12.1V DO13
More Detail: N/A
DataSheet: 1N5631A datasheet1N5631A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 10.79570
Stock 1000Can Ship Immediately
$ 11.88
Specifications
Voltage - Clamping (Max) @ Ipp: 12.1V
Supplier Device Package: DO-13
Package / Case: DO-13
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 124A
Series: --
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS Diode, or Transient Voltage Suppression Diode, is a diode that combines the protective features of a voltage regulator with the switching properties of a diode. One of its main applications is in protecting against overvoltage transients in automotive, industrial, and consumer electronics equipment. The 1N5631A is a TVS Diode that has a specific function as it provides a switched/controlled voltage protection.

1N5631A is a multiple-matrix protection device that can protect from over-voltage surges for multiple signals in automotive, consumer electronics, and industrial applications. Its primary purpose is to provide switched/controlled voltage protection. This product is specifically designed to protect signals, devices, or systems from damage due to over-voltage and electrical shocks. It provides a quick response to over-voltage spikes and reduces power consumption and time to recover from surges.

The 1N5631A TVS Diode has a bidirectional polarity, and a standoff voltage of 16V and a reverse break down voltage of 20V. It is available in various package sizes from SOD323 to D2PAK. It has a peak power dissipation of 500W, an operating temperature range from -55C to +125C, and a response time of 2.5 nanoseconds. As far as over-voltage protection is concerned, it is rated for protection up to 500V and has a maximum voltage clamp of 30V. The 1N5631A is UL-recognized and has been tested in compliance with the following standards: RoHS 2002/95/EC, EN60601-1, and IEC60950.

The working principle of the 1N5631A involves the forward voltage drop of the diode. When an over-voltage transient occurs, the voltage across the diode increases, causing the voltage drop to rise. This will cause current to flow through the diode, and the avalanche breakdown will occur. The avalanche breakdown junction will clamp the over-voltage transient to a level that is low enough to not damage the device or system being protected.

The 1N5631A is widely used in a plethora of automotive, industrial, and consumer electronics applications such as airbags, airbag control modules, power steering control modules, door control modules, power management control units, ECUs, power supplies, cell phones, batteries, and many others. It is also used in the power distribution network to enhance the protection of critical components. Ultimately, its benefit can be summed up in the fact that it helps to prevent and reduce damages and shorten the recovery time from over-voltage surges.

In conclusion, the 1N5631A TVS Diode provides a switched/controlled voltage protection for multiple signals in automotive, consumer electronics, and industrial applications. Its features include a maximum voltage clamp of 30V, a peak power dissipation of 500W, and a response time of 2.5 nanoseconds. It is used in a variety of applications, such as airbag control modules, power steering control modules, and many more. The working principle of the 1N5631A involves the forward voltage drop of the diode increasing with an over-voltage transient, resulting in an avalanche breakdown which subsequently clamps the voltage transient to a level low enough to protect the device or system from damage.

The specific data is subject to PDF, and the above content is for reference

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1N5638A Microsemi Co... -- 1000 TVS DIODE 13.6V 22.5V DO1...
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1N5626GPHE3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 3A DO...
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1N5622GP-E3/54 Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 1KV 1A DO2...
1N5644 Microsemi Co... 11.88 $ 1000 TVS DIODE
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