
Allicdata Part #: | 1N5630MS-ND |
Manufacturer Part#: |
1N5630 |
Price: | $ 11.88 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 10.79570 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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1N5630 is a type of TVS diode that is mainly used for protection applications. It provides a protective barrier to electronic components against electrical overstress from voltage transients such as electric arcs, ESD and electronic noise. TVS diodes are usually used for back-to-back clamping, that is, the anode and cathode are applied to different bus bars.
The 1N5630 has a surge handling capability of up to 150V and can withstand pulses up to 8.3A. It has a breakdown voltage of 8V and a low leakage current, making it suitable for noise filtering and protection applications. The package size for 1N5630 is SMA (Small Outline Transistor) which is very compact and ideal for applications with limited space. It also has excellent ESD protection and very low capacitance, which makes it suitable for high-speed applications such as COM ports.
The working principle of a 1N5630 is based on the principles of p-n junction. When an electric current is applied to a p-n junction, the current flow is divided into two components, namely forward current and reverse current. The forward current is the current that passes through the junction in the same direction as the external voltage applied to it, while the reverse current is the current that passes through the junction in the opposite direction. When the applied voltage is higher than the breakdown voltage of the 1N5630, the current flows through the diode in the reverse direction, resulting in a surge current.
1N5630 is widely used in electronics and industrial applications for protection as well as for noise suppression. It can be used to protect electronics from surges due to electric arcs, ESD, noise, and voltage transients. It is often used in power supplies, power lines, telecom lines, and data lines. It is also used in automotive electronics such as engine control units, headlights, and brake controllers. In addition, 1N5630 can be used in aviation electronics such as aircraft fuel control systems and landing gear systems.
1N5630 is a versatile TVS diode that can be used in many applications. Its compact size, low leakage current, and excellent surge-handling capabilities make it ideal for several electronic and industrial applications. It is also very reliable and cost-effective, making it an ideal choice for a wide range of protection and noise-suppression applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5618GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5660A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 111V 179V DO13 |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
1N5662A | Microsemi Co... | 15.37 $ | 74 | TVS DIODE 136V 219V DO13 |
1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5633A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 8.55V 14.5V DO1... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
TVS DIODE 31V 56.4V DO214AB

TVS DIODE 8.5V 13.5V DO219AB

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TVS DIODE 170V 334V CASE 5A

TVS DIODE 7.02V 12.1V T-18

TVS DIODE 78V 126V DO204AL
