Allicdata Part #: | 1N5627GPHE3/54-ND |
Manufacturer Part#: |
1N5627GPHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 3A DO201AD |
More Detail: | Diode Standard 800V 3A Through Hole DO-201AD |
DataSheet: | 1N5627GPHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N5627 |
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1N5627GPHE3/54 application field and working principle
The 1N5627GPHE3/54 is categorized as part of the diodes rectifiers single category, and is a small signal general purpose diode used primarily for general-purpose switching and signal rectification applications.
Application Field
This diode is used for a multitude of general-purpose applications including signal rectification, voltage clamping, peak current rectification, low current detection, and reverse biasing protection. Low switching and signal losses characterize it, making it suitable for power circuits.
Technical Description
This diode is a small signal diode that drains currents up to 3A and can also block up to 400V. Its gray tin plated case offers insulation up to 3000V, and its standard axial pin offers better mounting position variation. About its temperature rating, it is capable of working in -55 ºC to 150 ºC temperature range. It is also provided with pressure contact pin fastening structure, and its plastic body made of PBT material makes it capable of withstanding corrosion.
Structure
This diode is constructed as two electrodes, a P-type and an N-type, located on either side of the device. The negative side is connected directly to the housed package, while the P-type side is linked to the pins located on the back of the package.
Working Principle
The work of this small signal diode revolves around the basic principle of current and voltage flow regulation. When a small signal enters the diode, it passes through the P-type layer then passes out through the N-type layer, which results in rectification.
The same operation occurs when a positive and negative signal is presented simultaneously. The diode works as a switch and blocks the negative signal from entering the P-type layer and reversing the current. This is why it is commonly used as a switch in digital circuits.
Conclusion
The 1N5627GPHE3/54 is a small signal general purpose diode part of the diodes rectifiers single category specifically built for general-purpose applications such as signal rectification, voltage clamping, peak current rectification, low current detection, and reverse biasing protection. It comprises two electrodes, a P-type and an N-type, connected to a gray tin plated case with pressure contact pin fastening and plastic body made of PBT material. Its working principle is based on the basic principle of current and voltage flow regulation, where the diode passes through the P-type layer and out through the N-type layer, resulting in rectification either of a positive or negative signal.
The specific data is subject to PDF, and the above content is for reference
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1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
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1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
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1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5626-TAP | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 600V 3A S... |
1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
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