| Allicdata Part #: | 1N5652AMS-ND |
| Manufacturer Part#: |
1N5652A |
| Price: | $ 11.88 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 53V 85V DO13 |
| More Detail: | N/A |
| DataSheet: | 1N5652A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 10.79570 |
| Voltage - Clamping (Max) @ Ipp: | 85V |
| Supplier Device Package: | DO-13 |
| Package / Case: | DO-13 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 17.7A |
| Series: | -- |
| Voltage - Breakdown (Min): | 58.9V |
| Voltage - Reverse Standoff (Typ): | 53V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The 1N5652A is a unidirectional transil (Transient Voltage Suppressor) diode also referred as TVS ( Transient Voltage Suppressors) diode or SPD (Surge Protective Diode). It is a diode which is designed specifically to protect delicate electronics from voltage spikes. The diode efficiently clamps surges which are greater than its breakdown voltage, thus avoiding damage to the equipment.
The 1N5652A is designed with a low dynamic resistance and a high breakdown voltage. The design is such that when subjected to transients, the device can quickly absorb the transient current and reduce the peak voltage at the output. The device also effectively suppresses the voltage surges of up to 400V peak.
The 1N5652A is used in power supplies, electrical transducer, digital information devices, data communication equipment, etc. It is also used as inrush current limiting protection device in a variety of AC/DC power modules. It is ideal for protecting sensitive electronic circuitry from damage due to voltage spikes caused by load lines or switching inductors. The diode can also be used in low voltage applications where protection against fast transient events is desired.
The working principle of the 1N5652A diode is based on the avalanche breakdown phenomenon. When a reverse voltage greater than its breakdown voltage (VBR) is applied, the diode’s depletion region increases dramatically and a large current starts to flow. This effect is known as the avalanche breakdown. The 1N5652A is constructed of high purity silicon material which makes it suitable for high frequency applications. When a transient current passes through the diode, the junction capacitance decreases thus resulting in a lower peak voltage. The combination of the low junction capacitance and the avalanche breakdown effect makes the 1N5652A an ideal device for suppressing transients.
The 1N5652A is designed to absorb the transient energy and reduce the peak voltage. The junction capacitance of the 1N5652A diode is low, thus allowing it to operate efficiently up to 5MHz frequency. The avalanche breakdown voltage of the diode is typically 400V, making it suitable for applications requiring higher breakdown voltage. The diode can also be used to protect sensitive electronics against static electricity.
In summary, the 1N5652A is a unidirectional transil (Transient Voltage Suppressor) diode also referred as TVS ( Transient Voltage Suppressors) diode or SPD (Surge Protective Diode). It is designed with a low dynamic resistance and a high breakdown voltage. It is used in power supplies, electrical transducer, digital information devices, data communication equipment, etc. The working principle of the 1N5652A is based on the avalanche breakdown phenomenon and its junction capacitance allows it to operate efficiently up to 5MHz frequency. The 1N5652A is designed to absorb the transient energy and reduce the peak voltage. It is ideal for protecting sensitive electronic circuitry from damage due to voltage spikes caused by load lines or switching inductors.
The specific data is subject to PDF, and the above content is for reference
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| 1N5652 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
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| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5619GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5635A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 10.2V 16.7V DO1... |
| 1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
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| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5614GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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1N5652A Datasheet/PDF