| Allicdata Part #: | 1N5655MS-ND |
| Manufacturer Part#: |
1N5655 |
| Price: | $ 11.88 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | 1N5655 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 10.79570 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A transient voltage suppressor (TVS) diode is a diode that is specifically designed to provide protection against transient voltage events and stresses, such as electrostatic discharge (ESD). The 1N5655 is an (analog) unidirectional silicon TVS diode, primarily designed for surface mount applications. It offers an economical solution for ESD protection, while still providing sufficient suppression for most applications.
Application Field
The 1N5655 is designed for high-speed data line and telecommunications protection. It is capable of absorbing repetitive ESD strikes of up to ±15kV (EN 6100-4-2 level 4). These TVS diodes offer a low power solution for ESD protection and are used in a variety of consumer and industrial applications. Typical uses include desk phones, Bluetooth, hard drives, and other peripherals.
Working Principle
The 1N5655 is constructed with integrated Zener protection and a reverse biased PN junction. This offers a wide range of protection during ESD events, while utilizing fairly low power dissipation. Under normal conditions a reverse voltage (Vr) of 5.6 volts is applied across the device. When an ESD pulse is presented to the device, it will forward bias the PN junction which allows the ESD current to be discharged. The integrated Zener protection ensures the reverse voltage never exceeds the rated Vr value. Once the ESD pulse is over the diode will immediately recover to the normal, reverse biased condition.
In addition to ESD protection, the 1N5655 also offers protection against voltage transients and surges. It limits the peak voltage to its reverse voltage rating as long as the total average surge energy does not exceed its power dissipation rating. The device also offers fast response to ESD pulses and surge transients with its 10nS typical recovery time.
Overall, the 1N5655 diode is an economical and reliable protection solution for high-speed data line and telecommunications applications. It is suitable for use in both consumer and industrial applications offering a low power solution for ESD protection and surge protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5664 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
| 1N5633 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5639 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5624GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AC... |
| 1N5629A | Microsemi Co... | 11.88 $ | 13 | TVS DIODE 5.8V 10.5V DO13 |
| 1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
| 1N5629 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
| 1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
| 1N5644A | Microsemi Co... | 15.37 $ | 47 | TVS DIODE 25.6V 41.4V DO1... |
| 1N5630A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 6.4V 11.3V DO13 |
| 1N5652 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5658 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
| 1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
| 1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
| 1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5619GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5635A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 10.2V 16.7V DO1... |
| 1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5647 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5614GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5651A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 47.8V 77V DO13 |
| 1N5662 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5621US | Microsemi Co... | 9.87 $ | 1000 | DIODE GEN PURP 800V 1A D5... |
| 1N5654A | Microsemi Co... | -- | 1000 | TVS DIODE 64.1V 103V DO13 |
| 1N5643 | Microsemi Co... | -- | 1000 | TVS DIODE |
| 1N5661 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
| 1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
| 1N5632 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
1N5655 Datasheet/PDF