2N3735 Allicdata Electronics
Allicdata Part #:

2N3735-ND

Manufacturer Part#:

2N3735

Price: $ 9.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 40V 1.5A TO-39
More Detail: Bipolar (BJT) Transistor NPN 40V 1.5A 1W Through ...
DataSheet: 2N3735 datasheet2N3735 Datasheet/PDF
Quantity: 1000
100 +: $ 9.08635
Stock 1000Can Ship Immediately
$ 9.99
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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2N3735 is a single, bipolar, epitaxial transistor that provides high current gain in transistors, specifically in the field of semiconductors. It is a type of n-p-n transistor with a base terminal connected to a collector region and an emitter connected to a collector region. The relatively low power rating makes the 2N3735 suitable for applications where current doesn’t need to be boosted for a very high voltage.

This transistor has a PNPN type construction and is mainly used for low-power, low-noise, and low-voltage applications. The base-emitter junction has a built-in positive temperature coefficient which makes it suitable for bias and current stabilizing circuits. The 2N3735 is typically found in power management circuits, low-power amplifiers, and low-noise audio amplifiers.

The working principle of the 2N3735 is based on the concept of a bipolar junction transistor and the current flow in the emitter-collector junction. This junction becomes forward-biased when electric current flows through the base-emitter junction, allowing majority carriers (holes or electrons) to flow from emitter to collector. Ionic majority carriers, created by the input voltage, accumulate at the junction and create a current flow.

The current gain of the 2N3735 can be controlled electronically by varying the voltage applied to the base terminal. Variations in the base voltage have the effect of changing the current gain of the transistor, which is known as the Hfe. A higher Hfe indicates higher current gain and higher gain-bandwidth product, which is the ratio of output current to input current and indicates the maximum frequency at which the transistor can be used.

The 2N3735 is a reliable and cost-effective transistor with high current capacity, low power dissipation, and low noise. It is used in a wide range of applications, from power management to low-noise audio amplifiers. The unique temperature coefficient of the base-emitter junction allows this transistor to remain stable over varying temperatures. This allows the 2N3735 to be used in many applications, such as in switching power supplies, small amplifiers, and other circuits where current and voltage stability is required.

The specific data is subject to PDF, and the above content is for reference

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