2N3743 Allicdata Electronics
Allicdata Part #:

2N3743-ND

Manufacturer Part#:

2N3743

Price: $ 11.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PNP TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N3743 datasheet2N3743 Datasheet/PDF
Quantity: 1000
100 +: $ 10.31210
Stock 1000Can Ship Immediately
$ 11.35
Specifications
Series: *
Part Status: Active
Description

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The 2N3743 is a bipolar junction transistor used in a variety of applications. As a single BJT, it is a three-terminal device with base, collector and emitter terminals. It is constructed with an integral base-collector and base-emitter junction, surrounding a silicon wafer. This structure offers important features such as high-frequency operation and low power dissipation.

The 2N3743 is designed for use in a wide range of applications including amplified audio circuits, RF amplifiers, switching and phase-shift oscillators, television circuits, ultrasound equipment, power amplifiers, and motor control applications. It is typically used as an amplifier, switching device, transistor switch, or linear regulator.

The 2N3743 is able to operate with high frequency due its construction. The inherent feedback principle of the transistor is used to provide gain, and the circuit is robust enough to be continuously exposed to high amplitude radio-frequency (RF) signals. As such, it is particularly suitable for high-frequency applications such as radio receivers, low noise amplifiers and in ultra-sonic circuits.

In operation the 2N3743 can switch between the two active states of transistor action, between the “cut-off” and “saturation” modes. In cut-off, the transistor acts as an open switch; any input signal applied to the base is neglected as if the transistor were simply bypassed by the source. This is the idealcutoff condition. The transistor, usually operating in a linear amplifier mode, then proceeds to saturate (meaning the current through the collector and emitter terminals tends to increase iof infinity).

The 2N3743 is configured as a NPN transistor in a TO-220 package. The NPN configuration is two P-type layers surrounding a single N-type layer, with the base terminal connected to the N-layer. In this configuration, the current to the emitter flows through the P-type layers, and is controlled by the base signal. The collector is an N-type layer with an inherent voltage bias signal.

In applications requiring variant signal processing, the 2N3743 can also be used as a current source. This operation requires connection of the collector to a negative voltage source, and application of a positive voltage at the base. This arrangement allows for the control of current, allowing for accurately timed operations.

The use of the 2N3743 as a linear amplifier is often preferred in applications with high levels of modulation, or the requirement of sharp input and output. Amplifiers employing this BJT may be used to amplify input voltages, or provide similar operation to a current mirror. This is an important use since it reduces the noise that can be produced in some amplification systems.

The 2N3743 is a versatile BJT providing a range of options to the engineer. It combines high frequency capability with efficient gain, allowing for the implementation of reliable, dependable amplification circuits. This makes it an important choice for many RF, audio and power control applications.

The specific data is subject to PDF, and the above content is for reference

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