2N3866

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The 2N3866 is an NPN, Silicon Polarity, hybrid Transistor, part of the RF family. Manufactured by NXP, it is primarily used for RF amplification and oscillator circuits in RF applications including VHF and UHF equipment. It has a quite low noise figure and offers very linear transfer characteristics. The 2N3866 has been fully characterized for use in inductive source designs, and it includes an integrated bias resistor on its substrate.

The main application fields for the 2N3866 is in RF and microwave amplifiers, mixers and oscillators, as well as signal processing and signal generation. It is also suitable for use in low noise amplifiers, active antennas, remote amplifiers, distributed amplifiers, RF amplifiers and high linearity transmitters.

The specific advantages offered by the 2N3866 are its low noise figure, linear gain and exceptional linearity performance, and its wide operating frequency range. The 2N3866 has excellent thermal and power characteristics and offers very low distortion.

The 2N3866 is a single stage discrete device which requires a minimum of external components. It consists of a Class A single stage RF amplifier, which is connected to an integrated bias resistor. The transistor operates from a single supply voltage and offers excellent linearity performance due to its internal bias resistor. The transistor also has excellent thermal and power characteristics, and offers very low distortion.

The 2N3866 operating principle is based on the common-base configuration. The transistor contains an internal bias resistor, which produces a well defined base-to-emitter voltage. When the input signal is applied, this voltage varies in response to the voltage level of the signal. As the transistor gain is proportional to the base-to-emitter voltage, the gain of the amplifier is modulated by the voltage level of the input signal. The input signal is then amplified by the transistor and appears as the output signal.

The gain of the 2N3866 can be adjusted using the bias resistor. With the bias resistor connected, the 2N3866 will have a linear gain (G) of: G = VDD/R, where VDD is the supply voltage and R is the bias resistor. This gain can be modulated by adjusting the bias resistor. This allows the gain to be set to the desired level, depending on the application.

The 2N3866 is a reliable, high performance, cost effective device for a wide range of RF and microwave applications. It has low noise, excellent linearity and superior thermal and power characteristics. The integrated bias resistor allows for easy gain control, and it offers very low distortion. It is ideal for use in low noise amplifiers, active antennas, remote amplifiers, distributed amplifiers, RF amplifiers and high linearity transmitters.

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