
Allicdata Part #: | 2N3811L-ND |
Manufacturer Part#: |
2N3811L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS 2PNP 60V 0.05A TO-78 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-78-6 Metal Can |
Supplier Device Package: | TO-78-6 |
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2N3811L is a small signal PNP transistor array. It is packaged in a dual-in-line package (DIP) and has an excellent high frequency switching performance. It is widely used in amplifying, switching and oscillating circuits.
2N3811L Application Field
The 2N3811L transistor array can be used in a wide variety of applications. Below are some of the most common ones.
- Low noise amplifiers: The 2N3811L can be used in low noise amplifiers, as its low noise characteristics make it well suited for such designs. It is typically used together with other high gain transistors, and its high frequency characteristics allow for a fast response time.
- RF Signal Switches: The array is commonly used in RF signal switches due to its fast turn-on time and low isolation levels. This allows it to switch RF signals quickly and efficiently.
- Broadband Amplifiers: The 2N3811L can be used in broadband amplifiers to achieve a wide frequency response. It is also used in oscillators and in tuned amplifiers, allowing it to be used in a wide range of applications.
2N3811L Working Principle
The 2N3811L Working principle is based on the physics of the interaction of electrons and holes in the transistor. It has three terminals: The collector, base and emitter. The base is used to control the current flow between the collector and the emitter by making use of the flow of electrons from the emitter and holes from the collector.
The collector circuit collects the total current from the emitter and holes from the collector. The current from the collector is then sent to the base. The current from the base then controls the flow of electrons and holes from the collector and the emitter, respectively. This allows the 2N3811L to act as an amplifier, since it can control the current flow between the collector and emitter.
The 2N3811L is an ideal choice for a variety of electronic design applications. It is capable of operating at high frequencies and is capable of withstanding high current and voltage. The array is also compatible with a wide variety of packaging structures, making it easy to integrate into existing designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2N3859A_D75Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 60V 0.5A TO-92B... |
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2N3866 | Central Semi... | -- | 2097 | TRANS RF NPN 30V 400MA TO... |
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2N3807 | Central Semi... | -- | 1000 | TRANS 2PNP 50MA 60V TO78-... |
2N3809 | Central Semi... | 0.0 $ | 1000 | TRANS 2PNP 50MA 60V TO78-... |
2N3811A | Central Semi... | 0.0 $ | 1000 | TRANS 2PNP 50MA 60V TO78-... |
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