2N3811L Allicdata Electronics
Allicdata Part #:

2N3811L-ND

Manufacturer Part#:

2N3811L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS 2PNP 60V 0.05A TO-78
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50...
DataSheet: 2N3811L datasheet2N3811L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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2N3811L is a small signal PNP transistor array. It is packaged in a dual-in-line package (DIP) and has an excellent high frequency switching performance. It is widely used in amplifying, switching and oscillating circuits.

2N3811L Application Field

The 2N3811L transistor array can be used in a wide variety of applications. Below are some of the most common ones.

  • Low noise amplifiers: The 2N3811L can be used in low noise amplifiers, as its low noise characteristics make it well suited for such designs. It is typically used together with other high gain transistors, and its high frequency characteristics allow for a fast response time.
  • RF Signal Switches: The array is commonly used in RF signal switches due to its fast turn-on time and low isolation levels. This allows it to switch RF signals quickly and efficiently.
  • Broadband Amplifiers: The 2N3811L can be used in broadband amplifiers to achieve a wide frequency response. It is also used in oscillators and in tuned amplifiers, allowing it to be used in a wide range of applications.

2N3811L Working Principle

The 2N3811L Working principle is based on the physics of the interaction of electrons and holes in the transistor. It has three terminals: The collector, base and emitter. The base is used to control the current flow between the collector and the emitter by making use of the flow of electrons from the emitter and holes from the collector.

The collector circuit collects the total current from the emitter and holes from the collector. The current from the collector is then sent to the base. The current from the base then controls the flow of electrons and holes from the collector and the emitter, respectively. This allows the 2N3811L to act as an amplifier, since it can control the current flow between the collector and emitter.

The 2N3811L is an ideal choice for a variety of electronic design applications. It is capable of operating at high frequencies and is capable of withstanding high current and voltage. The array is also compatible with a wide variety of packaging structures, making it easy to integrate into existing designs.

The specific data is subject to PDF, and the above content is for reference

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