2N3820 Discrete Semiconductor Products |
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Allicdata Part #: | 2N3820-ND |
Manufacturer Part#: |
2N3820 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 20V 0.35W TO92 |
More Detail: | JFET P-Channel 20V 350mW Through Hole TO-92-3 |
DataSheet: | 2N3820 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 20V |
Current - Drain (Idss) @ Vds (Vgs=0): | 300µA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 8V @ 10µA |
Input Capacitance (Ciss) (Max) @ Vds: | 32pF @ 10V |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3820 |
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The 2N3820 is a medium-power field effect transistor (FET) device designed for use in both analog and digital circuits. It is an n-channel junction field-effect transistor (JFET) which operates by controlling the width of a “gate” from source to drain in a small region of the transistor, thereby controlling the amount of current that can pass from source to drain. The 2N3820 is a ‘low-noise\' FET device with a low gate noise and low power consumption.
The drain and source of the 2N3820 are the two junctions in the device, where the gate meets the oxide layer. The oxide layer acts as an insulator, allowing only a small amount of current to flow between the source and the drain. When a voltage is applied to the gate, it creates an electric field which polarizes the oxide layer, allowing a larger amount of current to flow. This effect is used to control the flow of current between the source and the drain, allowing the device to act as an amplifier.
The 2N3820 is a medium-power field effect transistor (FET) device commonly used in a variety of applications. It is used in switching and amplifying circuits, where its low noise and low power consumption make it ideal for use in portable electronics, audio circuits and low-voltage circuitry. It is also suitable for use as a bias adjustment device in high-frequency circuits and for modulation in radar systems.
The working principle of the 2N3820 FET is based on its gate. A voltage applied to the gate alters the electric field in the region between the source and the drain, changing the conductivity of the field effect region in a nonlinear way. This in turn changes the current flow between the source and the drain and enables the FET to act as an amplifier. As the gate voltage is increased, the current flow increases, allowing the 2N3820 to be used as a switch.
In conclusion, the 2N3820 FET is a versatile and reliable device that can be used in a wide range of electronic applications. Its low power consumption, low noise, and high switching speed make it suitable for low-voltage and high-frequency applications, such as portable electronic devices and radio circuits. Its simple working principle allows it to be used as an amplifier, switch, or bias adjustment device, making it a useful and versatile tool for a variety of purposes.
The specific data is subject to PDF, and the above content is for reference
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