2N3811 Allicdata Electronics
Allicdata Part #:

2N3811-ND

Manufacturer Part#:

2N3811

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS 2PNP 60V 0.05A TO-78
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50...
DataSheet: 2N3811 datasheet2N3811 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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The 2N3811 is an NPN, thyristor-Darlington array manufactured by several different corporations, including Motorola and Western Electric. It is notable for its high breakdown voltage rating and its ability to switch any combination of NPN and PNP transistors with both common-emitter and common-base characteristics. This makes it an attractive choice for a variety of applications.

At its most basic level, the 2N3811 is a type of bipolar junction transistor (BJT) device. Unlike other conventional transistors, BJTs are able to switch between conducting and non-conducting states, creating an oscillation effect that can be used to amplify electronic signals or control other electronic components. Though 2N3811 devices differ in their breakdown voltages, power ratings, and current gains, the basic structure of the device remains the same.

The 2N3811 is an ideal candidate for a variety of common-emitter and common-base applications because of its robust breakdown voltage. In an NPN Darlington array configuration, the 2N3811 can be used to switch a combination of NPN and PNP transistors, with both common-emitter and common-base characteristics. Darlington arrays are capable of amplifying both large and small signals with high linearity, making them an excellent choice for a variety of applications, especially those that need to limit the output current.

The basic working principle behind the 2N3811 is simple. When an input voltage is applied to the base of the transistor, it can then switch between conducting and non-conducting states, allowing current to flow between the emitter and collector. The device can be used to amplify both AC and DC signals, as well as provide higher current gain than other transistors. The 2N3811 is also well suited for applications where low power dissipation is required, and because it can switch several transistors simultaneously, it can also help reduce design complexity.

The 2N3811 makes a great candidate for any application that requires a stable and reliable switching transistor array. It is particularly useful in applications that require a high breakdown voltage and the ability to handle large currents. Additionally, its simple working principle and high current gain make it an ideal choice for a variety of different applications. Common applications for the 2N3811 include analog circuits, digital circuits, and power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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