Allicdata Part #: | 2N3819_D27Z-ND |
Manufacturer Part#: |
2N3819_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 50MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | 2N3819_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 50mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3819 |
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2N3819_D27Z is commonly referred to as a field-effect transistor (FET) and is used in a wide range of radio frequency (RF) electronics applications. Despite its wide use, not many people understand the operation of these devices so this tutorial will provide a basic overview of FETs, the 2N3819_D27Z type in particular, and the applications of which it can be used for.
Basic Theory of Operation: FETs are solid-state devices that are controlled by a voltage applied to their Gate. When a voltage is applied to the Gate, it causes an electric field to be generated, just like with a capacitor, which in turn causes a change in the conduction current flowing between the Source and Drain of the device. Unlike with a bipolar transistor, the conductivity of the FET is variable rather than fixed, which allows for greater precision in the relationship between voltage applied to the Gate and current flow through the FET.
2N3819_D27Z Device: The 2N3819_D27Z is a Small Signal Surface Mount FET device designed for use in RF applications. It has a maximum Gate-Source Voltage of 12V, a Gate-Drain voltage of 12V, and a Drain-Source Voltage of 25V. It has a low RDSon of 4.1ohm and a high transconductance of 9.7ms.
Applications: FETs, and the 2N3819_D27Z in particular, are commonly used in RF circuits, such as amplifiers, mixers, and oscillators. Its low RDSon, high transconductance, and low power consumption make it ideal for these types of circuits. It is also used in low-noise amplifier circuits, as its low noise floor helps to reduce noise in the signal. It can be used as a switch in circuits where voltage stability is a priority.
Conclusion: FETs are a vital component in many radio frequency circuits, and the 2N3819_D27Z, in particular, is an excellent choice for RF applications due to its low RDSon, high transconductance, and low power consumption. Its low noise floor makes it ideal for low-noise amplifier circuits. It also has excellent voltage stability, making it an ideal choice as a switch in certain circuit designs. In conclusion, the 2N3819_D27Z is a versatile and reliable choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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