Allicdata Part #: | 2N3811U-ND |
Manufacturer Part#: |
2N3811U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS 2PNP 60V 0.05A TO-78 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50... |
DataSheet: | 2N3811U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1mA, 5V |
Power - Max: | 350mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-78-6 Metal Can |
Supplier Device Package: | TO-78-6 |
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The 2N3811U is an N-Channel JFET, or Junction Field Effect Transistor, designed primarily for use as a switching transistor in medium to high power applications. It has been popular for many years due to its low cost and good performance, however modern devices with higher power ratings and higher performance have made the 2N3811U obsolete for new designs. The JFET is commonly used as a switch on or off, or for digital logic, but it can also be used for general-purpose low-power applications, such as low power amplifiers, common source amplifier, oscillators, and as a buffered voltage follower.
The 2N3811U is a single-gate N-channel JFET, designed for use with a maximum voltage rating of 60 volts, drain current of 150 milliamps, and a power dissipation of up to 300 milliamps. The 2N3811U has an enhancement mode of operation, meaning that it can be used to control voltage between its gate and source. The JFET can be used in various arrangements with other components or as a part of a larger circuit to provide unique, specialized functionality.
The 2N3811U can be grouped together with other devices in order to create an array of transistors, which can be used in a variety of applications, such as amplifiers, oscillators, and voltage regulators. Arrays can be used to increase the output current of a circuit, reduce the noise, and provide a variety of different functions, depending on the desired application. A popular example of a transistor array is the Darlington pair, which consists of two transistors that are connected in such a way that their combined performance is greater than the sum of their individual parts.
The main advantage of using the 2N3811U in an array is the ability to increase the current and power output. In addition to providing increased current, the array provides improved matched characteristics, improved latch-up immunity, improved temperature stability and improved noise immunity. The 2N3811U can also be used in a variety of and even complex applications, such as push-pull or BDDC-type amplifiers, or as a logic driver, switches, or as a clock generator. The 2N3811U can also be used as a simple collector-emitter resistor, where the 2N3811U is used as a variable resistor, controlling the current or voltage when connected in series.
The 2N3811U has a simple to use construction and is ideal for board mounting. The device is available in a variety of configurations in terms of power ratings and voltage ratings. This makes it suitable for a variety of applications and can be tailored to suit specific requirements. The device also has a low capacitance, high breakdown voltage and high transconductance. This ensures that it can be used in applications with high-speed signals and high-current drivers. The 2N3811U is not recommended for use with high frequencies, however, as its stability may be affected if used with signals at frequencies greater than 1kHz.
In conclusion, the 2N3811U is an ideal choice for a variety of medium to high power applications, where its low cost, good performance and array capability make it an ideal choice. Its wide variety of available configurations make it suitable for many different applications, from low-power amplifiers to high-power array control. Its low-capacitance, high-breakdown voltage, and high-transconductance combine to make it a reliable, versatile, and powerful component.
The specific data is subject to PDF, and the above content is for reference
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