
Allicdata Part #: | 2N3859A_D75Z-ND |
Manufacturer Part#: |
2N3859A_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 500mA 250MHz 625m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3859 |
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The 2N3859A_D75Z is part of the Transistors - Bipolar (BJT) - Single category and is used in many electrical and electronic applications. The device is a Field Effect Transistor (FET) with two terminals that are labeled “Source” and “Drain.” The transistor is a three-terminal device with the collector, emitter, and base terminals. The transistor\'s primary operating characteristics are forward- and reverse-biased breakdown, transconductance, and gain.
Purpose of 2N3859A_D75Z Transistor
The 2N3859A_D75Z transistor is usually used in medium-powered linear applications, such as audio amplifiers and pulse circuits. It has a low output impedance and can handle high peak current, making it useful for switching applications. In addition, because of its temperature coefficient and low threshold voltage, it can be used for processing low-frequency signals or for driving loads that require fast and accurate responses.
Working Principle of 2N3859A_D75Z Transistor
The 2N3859A_D75Z transistor works using the three-terminal device principle. This means that current and voltage enter the base terminal and flow through the transistor, exiting through the collector terminal. The current and voltage entering the base terminal vary depending on the biasing of the transistor, the amount of current that enters the base and the amount of voltage that is applied to the base. As the biasing of the transistor changes, so too does the current and voltage flow through it, resulting in different levels of amplification, depending on the biasing.
Types of 2N3859A_D75Z Transistor
The 2N3859A_D75Z transistor is available in two different types. The first type is the junction field effect transistor (JFET) which is made from semiconductor material and is designed to allow current to flow through it depending on the biasing applied to the transistor. The second type is the metal-oxide-semiconductor field effect transistor (MOSFET) which is made from deposited metal layers and allows current to flow depending on the biasing applied to the transistor. Both types of transistors can be used in many different applications, but they have different characteristics and may be better suited for different applications.
Advantages and Disadvantages of 2N3859A_D75Z Transistor
The 2N3859A_D75Z transistor has several advantages. It can be used in medium-power linear applications, has a low output impedance, and can handle high peak current. It also has a high gain and transconductance, making it useful for processing low-frequency signals. Lastly, it is relatively inexpensive when compared to other types of transistors.
The 2N3859A_D75Z transistor also has some disadvantages. It has a limited temperature coefficient and a low threshold voltage, which can limit its usefulness in some applications. Furthermore, because it is a three-terminal device, it is sensitive to parasitic capacitances and has a tendency to oscillate if not properly biased. Finally, it has a limited switching speed, making it less useful for high-speed applications.
Conclusion
The 2N3859A_D75Z transistor is an important part of the Transistors - Bipolar (BJT) - Single category and is used in many applications. It has a low output impedance, a high gain, and a low threshold voltage, making it suitable for many types of applications. However, it does have some drawbacks including its limited temperature coefficient, its susceptible to parasitic capacitances, and its limited switching speed. As such, it is important to choose the right transistor for the job.
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