2N3867

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The 2N3867 is a very common single bipolar junction transistor (BJT). It is used for a variety of electronic applications, ranging from basic amplifiers and switches to more sophisticated radio frequency (RF) and audio circuits. A key difference in this BJT from others is the wide range of collector-emitter breakdown voltage up to as high as 100 V. This makes it particularly useful in applications that require large collector-emitter breakdown voltages, such as high voltage buzzers and some RF amplifiers.

A BJT typically has three pins—an emitter, a base, and a collector—which are denoted by the symbols E, B and C respectively. The base pin forms the active region where current gain can be controlled by the voltage or current applied. The emitter-collector region forms the output which can further amplify the current or voltage applied. A BJT operating mode is determined by the current flow between the collector and emitter, which can either be in reverse or forward direction.

The 2N3867 is classified as a NPN BJT. It is used in circuits such as amplifiers, oscillators, switching circuits, signal modulation, and power switching. The 2N3867 is particularly useful in power switch applications since it is able to handle up to 100 V, far beyond the limits of most other BJTs. The transistor has a nominal current gain of 25; that is, for every one unit increase in base current, the collector current is multiplied by 25. The collector-emitter breakdown voltage is typically between 10 and 60 V. This makes the 2N3867 suitable for a wide range of applications.

The working principle of a BJT is similar to other transistors. When a voltage is applied to the base-emitter region, it creates a forward biased junction and results in the injection of minority carriers—in the case of a NPN BJT, these will be holes. These minority carriers reach the collector-emitter junction which creates a reverse bias. This reverse bias causes most of the minority carriers to “fall back” into the emitter, thus resulting in a current gain. If a signal is fed to the base and the emitter-collector junction is biased, the signal will be amplified by the transistor.

The 2N3867 is a versatile transistor suitable for a wide range of applications. Its wide collector-emitter breakdown voltage and high current gain makes it particularly useful in applications that require high voltages. Its NPN construction is suitable for both forward and reverse bias operation, which makes it even more versatile. It is thus a popular choice for use in electronic circuits.

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