2N3868S

The 2N3868S is a double-diffused transistor designed for use in industrial, military, commercial and telecommunication applications, and belongs to the Bipolar (BJT) - Single family of transistors. It features an emitter-base voltage of 5 Volts, an emitter-collector voltage of 10 Volts, and a collector-base voltage of 10 Volts. Its maximum collector current is 5 Amps.

Design & Construction

The 2N3868S is built to withstand high temperatures and high signal levels. It consists of an emitter, a base, and a collector that are housed within an insulated case. The emitter is connected to an internal source of electrons, which is the main source of current in the transistor. The base is the control element of the transistor, and the collector is the output for the current. The insulation between the base and the collector helps to keep the current from going in the wrong direction.

Applications

The 2N3868S is widely used in industrial and telecommunication applications, such as digital switching circuits, relays, and many analog circuits. It is also used in the medical industry, in medical imaging and radiation devices, as well as in aircraft and vehicle electronics. Additionally, it is used in high-voltage applications such as motor control and power supply circuitry.

Working Principle

The 2N3868S is a bipolar junction transistor, which means that it works as a switch or amplifier to provide either an on-off or variable amount of current. It works by using a thin layer of silicon to separate the base from the collector, forming two p-n junctions. The base is the middle of the three parts and it acts as a switch, controlling the amount of current that can flow through the other two parts of the transistor. When a voltage is applied to the base, it allows a current to pass though the collector, increasing the amount of current between the emitter and the collector.

When the voltage is increased on the base, more current can flow through the collector and less current is needed to flow through the emitter. This produces a larger current amplification. Conversely, reducing the voltage on the base will reduce the current flowing through the collector, resulting in less current amplification. The amount of current amplification that is produced is determined by the amount of applied voltage and the relative resistance between the emitter and the collector.

Advantages

The main advantage of the 2N3868S is its high power handling capability. Because of its high power rating, it can be used in applications where high levels of current are needed. Additionally, the insulated case keeps the transistor from being affected by environmental changes. Finally, its versatile design makes it a suitable choice for multiple types of applications.