2N3810U

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 1mA, 5V
Power - Max:	350mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-78-6 Metal Can
Supplier Device Package:	TO-78-6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2N3810U Application field and Working Principle

The 2N3810U is an advanced arrangement of bipolar transistors and offers improved performance, reliability and a wide range of uses. It is commonly used in applications such as telecommunications, computing, telecom and consumer electronics. This device has several advantages compared to other forms of BJT arrays. It can be used for both switching and linear type applications, has higher gain and power ratings than other BJT arrays and has lower noise production.

Overview

The 2N3810U is a bipolar junction transistor (BJT) array, or an array of BJTs in one package. It consists of three transistors with their emitters connected in common, each with its own base and collector. The package contains two groups of nine transistors, each with three emitters and one collector. The 2N3810U is packaged in an 8-pin dual-in-line package (DIP).

Advantages

The 2N3810U offers high performance compared to other BJT arrays. It has a higher gain over more traditional BJTs and the power dissipation is higher due to the larger number of transistors. Other advantages include: •Improved switching characteristics, high frequency performance and high input impedance for audio applications•Low total harmonic distortion•Low power consumption•High reliability and durability

Applications

The 2N3810U is commonly used in a wide range of applications including telecommunications, computing, telecom, consumer electronics and automotive applications. It is used in applications such as sine wave generation and step attenuators. The array can also be used in audio amplifiers, switch mode power supplies, inverters and motor drives.

Working Principle

The 2N3810U is an arrangement of bipolar junction transistors that operate as a switch. In this type of device, two transistors are used in combination, where one is set up to act as a switch, while the other is set up as an amplifier. The two transistors are joined together in a way that when a current is applied to the base of one transistor, the other will be activated and act as an amplifier. This arrangement of the two transistors is known as the common-emitter amplifier configuration.When a current is supplied to the base of one transistor, it causes the current to flow from the collector to the emitter of the other transistor. This current then appears at the output as an amplified signal. This means that the transistor amplifies the input signal and allows for a more powerful output signal.

Conclusion

The 2N3810U is an advanced array of bipolar junction transistors that offers better performance, reliability, and a wide range of uses. It is commonly used in a variety of applications such as telecommunications, computing, telecom and consumer electronics. The array combines two transistors in a common emitter amplifier configuration, allowing for improved switching characteristics, high frequency performance, low total harmonic distortion, and low power consumption. It is a valuable addition to electronics projects.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description